Diamond-Penetrated Substrate for GaN HEMT Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The heat dissipation performance of semiconductor devices, particularly gallium nitride-based HEMT devices, is limited by the poor thermal conductivity of traditional substrates like silicon and sapphire, restricting high power and high frequency performance.
Innovation Solution
A semiconductor device with a diamond structure that longitudinally penetrates the substrate, comprising first and second diamond parts with different lateral dimensions, forming a longitudinal heat conduction channel to enhance thermal conductivity and lattice matching, thereby improving heat dissipation and epitaxial layer quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional substrate materials (silicon, sapphire) are used, then manufacturing cost and ease of manufacture are maintained, but thermal conductivity is poor, limiting heat dissipation performance
Solution Approach 1:
The patent uses a composite structure combining diamond particles with traditional substrate materials. Diamond particles are embedded in the substrate to form a composite material that leverages the high thermal conductivity of diamond while maintaining the manufacturability of traditional substrates like silicon or sapphire.
Solution Approach 2:
Instead of making the entire substrate from diamond, the patent applies diamond particles locally within the substrate structure. This creates regions of high thermal conductivity where needed (at the heat generation sites) while keeping the overall substrate manufacturable with conventional materials and processes.
2Temperature
If diamond structure is introduced to improve thermal conductivity, then heat dissipation performance is improved, but device structure becomes more complex
Solution Approach 1:
The diamond structure is applied locally as embedded particles or regions within the substrate rather than as a complex overall device architecture. This provides high thermal conductivity where needed without requiring the entire device structure to be redesigned.
Solution Approach 2:
The patent uses diamond particles that can be replicated and embedded using standardized manufacturing processes. The diamond structures serve as reusable thermal management components that can be incorporated into multiple devices through established fabrication techniques.
3Temperature
If diamond structure penetrates the substrate, then longitudinal heat conduction is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The diamond particles are embedded at specific locations within the substrate where heat conduction is most needed. This localized approach enhances longitudinal heat conduction without requiring precise control over the entire substrate structure.
Solution Approach 2:
The patent optimizes parameters such as diamond particle size, concentration, and distribution depth to achieve effective heat conduction. By adjusting these parameters, the patent balances thermal performance with manufacturing feasibility, reducing the stringency of precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diamond structure effectively conducts heat away from the device, enabling high power performance and improving the quality of the epitaxial layer, while maintaining a simple and scalable manufacturing process.
Implementation Method 1
Due to good thermal conductivity of the diamond structure, the diamond structure that penetrates the substrate may form a longitudinal heat conduction channel, so that heat generated by the operating device may be efficiently conducted to a periphery of the device
Data Source
AI summary
A semiconductor device includes a substrate, and an epitaxial layer and an electrode that are located on the substrate. The substrate has a diamond structure that longitudinally penetrates the substrate. The diamond structure may be longitudinally divided into a first diamond part and a second diamond part below the first diamond part. The first diamond part and the second diamond part have different lateral dimensions.