Semiconductor-on-Diamond Substrate with Nucleation Layer Heat Extraction
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Solution Overview
Problem
Current semiconductor wafers used in electronic and optical devices are limited by their ability to extract waste heat, which affects their efficiency and capacity, particularly due to inadequate heat transfer properties.
Innovation Solution
A method for manufacturing a semiconductor-on-diamond substrate involves forming a precursor with a sacrificial carrier layer, a single-crystal nucleation layer, and a device layer, where the nucleation layer is specifically designed to enable diamond growth, improving the surface boundaries and thermal conductivity for enhanced heat transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional semiconductor wafer structure is used, then the device can be manufactured with standard processes, but the heat transfer capability is insufficient
Solution Approach 1:
The patent employs a composite structure consisting of a diamond layer combined with a semiconductor device layer on a substrate. The diamond layer provides superior thermal conductivity to enhance heat transfer, while the semiconductor device layer maintains electrical functionality. This composite material approach allows the system to achieve both improved heat dissipation and standard manufacturability.
2Temperature
If diamond is directly grown on the substrate, then heat transfer is improved, but the surface quality for device layer formation deteriorates
Solution Approach 1:
The patent divides the structure into distinct functional layers: a substrate layer, a diamond layer for thermal management, and a semiconductor device layer for electrical functionality. This segmentation allows each layer to be optimized independently - the diamond layer for heat transfer and the device layer for high-quality surface and electrical performance.
Solution Approach 2:
The patent introduces an intermediate layer between the substrate and the diamond layer, or between the diamond layer and the device layer. This intermediary layer serves as a buffer that maintains surface quality for device formation while allowing the diamond layer to provide thermal conductivity enhancement.
3Temperature
If multiple processing steps are used to create the diamond structure, then heat transfer is improved, but the manufacturing complexity increases
Solution Approach 1:
The patent performs preliminary preparation of the substrate surface and nucleation layer formation before diamond growth. By pre-preparing the surface with appropriate nucleation sites and ensuring proper surface morphology, the subsequent diamond growth process becomes more efficient and produces higher quality diamond layers with better thermal properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a more efficient semiconductor-on-diamond substrate with improved thermal resistance and heat transfer capabilities, surpassing previous techniques by providing a better quality surface for diamond growth and device layer formation.
Implementation Method 1
a single-crystal nucleation layer on the sacrificial carrier layer, the single-crystal nucleation layer arranged to nucleate diamond growth
Data Source
AI summary
The invention provides a method 100 of manufacturing a precursor 105a for use in manufacturing a semiconductor-on-diamond substrate 110, the method comprising:a) starting with a base substrate 112; b) forming a sacrificial carrier layer 114 on the base substrate, the sacrificial carrier layer comprising a single-crystal semiconductor;c) forming a single-crystal nucleation layer 116 on the sacrificial carrier layer, the single-crystal nucleation layer arranged to nucleate diamond growth; andd) forming a device layer 118 on the single-crystal nucleation layer, the device layer comprising a single-crystal semiconductor layer or multiple single-crystal semiconductor layers.