Diamond Heat-Dissipating Substrate With Insulation-Filled Recesses
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Solution Overview
Problem
Gallium-nitride (GaN) semiconductor devices experience reduced electron mobility and increased internal temperature due to self-heating during high current and high frequency operations, necessitating a material with high thermal conductivity for effective heat dissipation.
Innovation Solution
A heat dissipating substrate with a diamond substrate featuring a concave-convex structure and insulation patterns, such as silicon carbide, silicon nitride, or aluminum oxide, which enhances thermal conductivity and bonding properties, is developed. The insulation patterns fill recessed regions on the diamond substrate, increasing adhesive force and thermal dissipation capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If diamond substrate with concave-convex structure is used, then thermal conductivity is improved, but bonding strength deteriorates due to reduced contact area
Solution Approach 1:
The patent applies local quality by filling recessed regions with insulation patterns having different thermal and mechanical properties than the diamond substrate. The insulation patterns (e.g., silicon carbide, aluminum nitride) provide localized thermal management while maintaining structural integrity for bonding, creating spatially varying properties that simultaneously address heat dissipation and bonding requirements
Solution Approach 2:
The patent employs composite materials by combining diamond substrate with insulation patterns made of different materials (silicon carbide, silicon nitride, aluminum nitride, aluminum oxide). This composite structure leverages the high thermal conductivity of diamond while the insulation patterns provide complementary properties for bonding and localized thermal control, resolving the contradiction between heat dissipation and bonding strength
2Strength
If insulation patterns fill recessed regions, then bonding property is improved, but thermal dissipation capability may deteriorate due to insulation material
Solution Approach 1:
The insulation patterns are strategically placed only in recessed regions rather than covering the entire surface, creating local quality variations. This localized approach maintains bonding properties where needed while preserving thermal dissipation pathways through the diamond substrate in non-recessed areas, balancing both requirements
Solution Approach 2:
The concave-convex structure with recessed regions creates a porous-like topology that, when filled with insulation patterns, provides both mechanical interlocking for bonding and maintains thermal pathways. The structured voids and fills create a configuration that simultaneously achieves bonding and thermal management
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The substrate effectively dissipates heat generated by GaN semiconductor devices, improving their performance and reliability by maintaining lower operating temperatures and enhancing bonding with metal pads, thus extending mean time to failure (MTTF).
Implementation Method 1
Since diamond has a high thermal conductivity and a low coefficient of thermal expansion (CTE), the diamond attracts attention as a heat dissipating material
Implementation Method 2
The insulation patterns fill the recessed regions and increase adhesive force with a top surface of the diamond substrate
Data Source
AI summary
Provided is a heat dissipating substrate including a diamond substrate, wherein an upper portion of the diamond substrate has a concave-convex structure including recessed regions that are spaced apart from each other, and insulation patterns that fill the recessed regions. The insulation patterns include at least one of silicon carbide, silicon nitride, silicon oxide, aluminum nitride, and aluminum oxide.