Diamond Substrate Orientation for Uniform N-Type Layer
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Solution Overview
Problem
It is challenging to stably control uniform impurity concentration and high crystallinity in the formation of an n-type diamond semiconductor layer, particularly on (100) substrates, due to issues like abnormal growth particles and difficulty in achieving a flat phosphorus-doped layer with controlled doping concentration.
Innovation Solution
A semiconductor device is manufactured using a diamond substrate with a surface plane inclined from the (100) plane by 10 to 40 degrees, where an n-type diamond semiconductor layer is formed through epitaxial growth, reducing crystal defects and improving impurity concentration uniformity, and a pn diode structure is achieved with a Schottky electrode and ohmic electrode formed using specific metals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If an n-type diamond semiconductor layer is formed on a (100) substrate, then the substrate is inexpensive and easy to process, but abnormal growth particles and hillocks occur, making it difficult to achieve uniform impurity concentration and high crystallinity
Solution Approach 1:
The invention changes the substrate orientation parameter from (100) to (111), which fundamentally alters the growth characteristics of the diamond semiconductor layer. This parameter change eliminates abnormal growth particles and hillocks, enabling uniform impurity concentration and high crystallinity while maintaining manufacturing feasibility
Solution Approach 2:
The invention uses a composite structure combining (111) substrate with phosphorus-doped n-type diamond semiconductor layer. This composite approach leverages the unique properties of (111) oriented diamond substrates to achieve superior crystal growth characteristics and uniform doping distribution
2Reliability
If phosphorus doping is applied to form n-type layer, then n-type conduction is achieved, but it is difficult to control doping concentration and concentration profile
Solution Approach 1:
Changing the substrate orientation to (111) fundamentally improves the incorporation efficiency of phosphorus dopants during epitaxial growth. This parameter change enables precise control of doping concentration and uniform concentration profile, achieving reliable n-type conduction with manufacturable precision
Solution Approach 2:
The invention achieves uniform local quality throughout the n-type diamond semiconductor layer by using (111) substrate orientation. This ensures consistent phosphorus incorporation and uniform doping concentration across the entire layer, enabling reliable n-type conduction properties
3Manufacturing precision
If (111) substrate is used, then high crystallinity and uniform impurity concentration are achieved, but the substrate is hard and processing is difficult
Solution Approach 1:
While (111) substrate does present processing challenges due to hardness, the parameter change from (100) to (111) orientation enables superior crystal growth characteristics. The improved crystallinity and uniform doping distribution outweigh the increased processing difficulty, making it worthwhile for high-performance applications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of a high-quality n-type diamond semiconductor layer with improved uniformity and crystallinity, resulting in a high-performance pn diode with enhanced forward current and reduced leakage current, while maintaining rectification properties.
Implementation Method 1
an n-type diamond semiconductor layer is formed through epitaxial growth
Data Source
AI summary
A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011>±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above.