Diamond Substrate Separation via Ion Implantation and Heat Treatment
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Solution Overview
Problem
Current methods for manufacturing large-area single crystal diamond substrates are inefficient and costly due to slow etching rates of non-diamond layers, making it difficult to produce substrates in a short time and at a low cost.
Innovation Solution
A method involving ion implantation on a diamond seed substrate, followed by vapor phase synthesis and heat treatment to separate the diamond growth layer from the seed substrate, allowing for the production of large-area diamond substrates efficiently and economically.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If electrochemical etching is used to remove the non-diamond layer, then the diamond substrate can be separated from the seed substrate, but the etching rate is slow and production time is excessive
Solution Approach 1:
The patent replaces the chemical etching process with a mechanical separation method. By forming a brittle non-diamond layer through ion implantation and then applying impact force, the diamond substrate is mechanically separated from the seed substrate. This substitution of chemical process with mechanical process dramatically reduces separation time while maintaining quality.
Solution Approach 2:
The patent changes the physical and chemical parameters of the non-diamond layer through ion implantation. The ion implantation modifies the layer's properties to make it brittle and suitable for mechanical separation, transforming it from a state suitable for chemical etching to one suitable for impact-based mechanical separation.
2Manufacturing precision
If laser slicing is used to separate the diamond substrate, then separation can be achieved, but the method is costly and time-consuming
Solution Approach 1:
The patent replaces the complex laser slicing system with a simple mechanical impact system. Instead of using high-energy laser beams and precise positioning systems, the invention uses a straightforward impact mechanism to separate the substrates, dramatically reducing device complexity and processing cost.
Solution Approach 2:
The patent creates a disposable non-diamond layer through ion implantation that serves as a separation interface. This layer is intentionally made brittle and is removed in the separation process, replacing expensive and complex laser slicing equipment with a simple consumable layer approach.
3Manufacturing precision
If the non-diamond layer is made thinner to improve separation quality, then separation precision increases, but the etching rate becomes even slower
Solution Approach 1:
The patent replaces chemical etching with mechanical impact separation, eliminating the inverse relationship between layer thickness and processing speed. The mechanical impact method works effectively regardless of the non-diamond layer thickness, allowing optimization of separation quality without compromising productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the rapid and cost-effective manufacturing of large-area single crystal or polycrystal diamond substrates, improving crystal quality and reducing production time and costs.
Implementation Method 1
forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate
Implementation Method 2
performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer
Data Source
AI summary
A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.


