Diamond Substrate Structuring for High-Frequency Wireless Thermal Control

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Solution Overview

Problem

Current technologies face challenges in generating high-efficiency structures for wireless communications, particularly in high-frequency applications, due to difficulties in processing hard and chemically inert materials like diamond, which have high thermal conductivities, and maintaining material quality during processing, leading to issues with etch selectivity and damage to components.

Innovation Solution

The development of methods and systems that include substrates with thermal conductivities of 1000 W/mK or greater, using wide-bandgap semiconductor materials, and specific etching techniques such as plasma etching and laser processing to create features with high aspect ratios and improved etch angles, allowing for the formation of high-efficiency structures like transistors and amplifiers with reduced damage and increased processing efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional etching methods are used on diamond substrates, then material removal is achieved, but etch selectivity is poor and component damage occurs

Engineering Contradiction:
Improveetch selectivityVSAvoidcomponent damage
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by modifying the diamond substrate surface through laser irradiation before etching. The laser creates a modified region with altered crystalline structure that is more susceptible to etching, while the unmodified regions remain resistant. This pre-treatment enables selective etching of only the modified regions, achieving high etch selectivity and preventing damage to unmodified components.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces an intermediary approach by using a two-step process: first laser modification, then etching. The laser-modified region acts as an intermediary state between the original diamond substrate and the final etched feature. This intermediary modification layer enables controlled material removal with high selectivity, as the etchant selectively attacks the modified regions while leaving unmodified regions intact.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If high thermal conductivity materials like diamond are used, then thermal management is improved, but processing difficulty increases due to chemical inertness

Engineering Contradiction:
Improvethermal conductivityVSAvoidprocessing difficulty
Core Design Contradiction:
TemperatureVSEase of manufacture

Solution Approach 1:

The patent replaces conventional mechanical or direct chemical etching methods with a laser-based approach. The laser energy selectively modifies the diamond substrate by altering its crystalline structure in targeted regions, making those areas susceptible to subsequent etching. This substitution of direct mechanical/chemical action with optical field action overcomes the chemical inertness of diamond while maintaining its superior thermal conductivity properties.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent applies parameter changes by using laser irradiation to change the physical and chemical parameters of the diamond substrate in localized regions. The laser modifies the crystalline structure, bond strength, and surface energy of the diamond in the irradiated areas, transforming it from a chemically inert state to a reactive state that can be easily etched. This parameter change enables processing of diamond without compromising its bulk thermal conductivity.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If features with high aspect ratios are created, then device performance is improved, but processing complexity and time increase

Engineering Contradiction:
Improvedevice performanceVSAvoidprocessing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by using laser irradiation to pre-modify the diamond substrate in the regions where high aspect ratio features are desired. This pre-modification creates a pathway of reduced material resistance that guides the etching process, enabling the formation of high aspect ratio features with cleaner sidewalls and better dimensional control, thereby improving device performance while managing processing complexity.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

These methods enable the creation of high-efficiency wireless communication devices with improved thermal management and signal throughput, enhancing performance in high-frequency applications such as satellite communications by maintaining material quality and reducing processing time and complexity.

Implementation Method 1

applying a laser to generate a modified region within the structure, the modified region comprising a modified crystalline structure of the structure at a plurality of focal depths from a surface of the structure

Methodology Applied
Scientific EffectLaser processing: Laser

Implementation Method 2

The development of methods and systems that include substrates with thermal conductivities of 1000 W/mK or greater, using wide-bandgap semiconductor materials, and specific etching techniques such as plasma etching

Methodology Applied
Scientific EffectPlasma etching: Plasma

Data Source

PatentUS20230411314A1High-efficiency structures for improved wireless communications
Publication Date: 2023.12.21 AKASH SYSTEMS INC
  • US20230411314A1 patent drawing
  • US20230411314A1 patent drawing
  • US20230411314A1 patent drawing

AI summary

The present disclosure provides methods and systems of generating high-efficiency structures for improved wireless communications. Such structures may comprise hard and chemically inert materials. Such structures may include materials having average thermal conductivities equal to or greater than about 1,000 W/mK. Such structures may comprise diamond. Such structures may comprise materials whose properties may be affected through processing such structures. Such structures may comprise devices with improved electron mobilities and efficiencies. Such structures may comprise substrate features. Such features may be configured to communicatively couple to a device or a component of a substrate. A device may comprise a radio transmitter. Some examples include satellite transmitters.