Diamond Thin Film Transistor Leakage Current Suppression
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Solution Overview
Problem
Thin film transistors using diamond single crystal materials suffer from high leakage current due to their high carrier mobility, which degrades the operational characteristics and product quality over time.
Innovation Solution
The implementation of a thin film transistor design featuring a middle channel region with first and second high resistance regions on either side, using (111)-face diamond single crystal for the channel, source, and drain regions, and (100)-face diamond single crystal for the high resistance regions, treated with plasma and polar gas, along with a carbonized metal layer between electrodes and regions to form a stable ohmic contact, effectively reducing carrier mobility and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If diamond single crystal is used as the active layer material to improve carrier mobility, then the TFT performance is improved, but the leakage current increases
Solution Approach 1:
The active layer is segmented into three distinct regions with different crystal orientations: the middle channel region uses (111)-face diamond single crystal for high carrier mobility, while the first and second high resistance regions use (100)-face diamond single crystal to suppress leakage current. This spatial segmentation allows each region to perform its specific function optimally.
Solution Approach 2:
Different regions of the active layer are assigned different crystal orientations tailored to their specific functional requirements. The (111)-face orientation is applied locally to the channel region where high mobility is needed, while the (100)-face orientation is applied locally to the high resistance regions where leakage suppression is prioritized.
2Object-generated harmful factors
If high resistance regions are added to reduce leakage current, then the leakage current is suppressed, but the device structure becomes more complex
Solution Approach 1:
The high resistance regions are merged with the channel region to form a unified active layer structure. Both regions are grown as continuous diamond single crystal layers with different orientations, eliminating the need for separate discrete components while achieving leakage suppression.
Solution Approach 2:
The active layer is constructed as a composite structure combining two different crystal orientations of diamond single crystal: (111)-face for the channel and (100)-face for the high resistance regions. This composite approach leverages the complementary properties of different crystal orientations within a single integrated layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly suppresses leakage current and improves the stability and performance of the thin film transistor by reducing carrier mobility and forming a stable contact, thereby enhancing the operational characteristics and product quality.
Implementation Method 1
the active layer has been treated with plasma and polar gas
Implementation Method 2
a carbonized metal layer provided between the source electrode and the source region and between the drain electrode and the drain region
Data Source
AI summary
The embodiments of present disclosure provide a thin film transistor, a method for manufacturing the same, and an array substrate. The thin film transistor comprises an active layer provided on a substrate, the active layer including a middle channel region, a first high resistance region and a second high resistance region provided respectively on external sides of the middle channel region, a source region provided on an external side of the first high resistance region and a drain region provided on an external side of the second high resistance region, wherein a base material of the active layer is diamond single crystal. According to the thin film transistor, the method for manufacturing the same, and the array substrate provided in the embodiments of present disclosure, by providing high resistance regions on external sides of the middle channel region of the active layer, the carrier mobility is reduced and the leakage current of the thin film transistor made of single crystalline diamond is effectively suppressed.