Hybrid Diamond Thermal Interposer for Chip Heat Dissipation

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Solution Overview

Problem

Semiconductor devices face challenges in achieving high thermal performance without compromising mechanical integrity, particularly in high power and high performance applications like AI and HPC, due to the limitations of existing thermal interface materials.

Innovation Solution

Incorporation of a hybrid diamond thermal interposer with diamond particles in a metal matrix, which provides superior thermal conductivity and a matching coefficient of thermal expansion, ensuring effective heat dissipation while maintaining mechanical stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional thermal interface materials are used, then device assembly is simple, but thermal performance is insufficient for high power applications

Engineering Contradiction:
Improvethermal performanceVSAvoidmechanical integrity
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent employs a hybrid diamond thermal interposer composed of diamond particles embedded in a metal matrix (such as copper or aluminum). This composite structure combines the superior thermal conductivity of diamond (5-10 times higher than silicon) with the mechanical strength and ductility of metal, achieving both enhanced thermal performance and maintained mechanical integrity under thermal cycling conditions.

Inventive Principle:
Principle #40Composite materials

2Temperature

If high thermal conductivity materials are used, then heat dissipation improves, but thermomechanical stress increases causing cracking

Engineering Contradiction:
Improveheat dissipationVSAvoidmechanical stability
Core Design Contradiction:
TemperatureVSStrength

Solution Approach 1:

The patent optimizes the coefficient of thermal expansion (CTE) of the metal matrix to match that of the semiconductor chip and substrate. By selecting appropriate metal compositions and controlling processing parameters, the hybrid interposer achieves CTE matching that minimizes thermomechanical stress during thermal cycling, preventing cracking while maintaining high thermal conductivity through the diamond phase.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The hybrid diamond thermal interposer enhances thermal performance by up to three times that of silicon, reduces thermomechanical stress, and improves reliability by minimizing cracking and leaking risks, thus extending the device's lifetime.

Implementation Method 1

the hybrid diamond thermal interposer includes diamond particles within a matrix

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

provides superior thermal conductivity and a matching coefficient of thermal expansion, ensuring effective heat dissipation while maintaining mechanical stability

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS20250385147A1Semiconductor device including hybrid diamond thermal interposer
Publication Date: 2025.12.18 SAMSUNG ELECTRONICS CO LTD
  • US20250385147A1 patent drawing
  • US20250385147A1 patent drawing
  • US20250385147A1 patent drawing

AI summary

Semiconductor devices and methods of manufacturing the semiconductor devices are provided. For example, a semiconductor device may include: a substrate; an interposer at least partially on a first surface of the substrate that faces in a first direction; a first semiconductor chip on a first surface of the interposer that faces in the first direction; a second semiconductor chip at least partially on the first surface of the interposer, the second semiconductor chip spaced apart from the first semiconductor chip in a second direction that crosses the first direction; a hybrid diamond thermal interposer at least partially on a first surface of the first semiconductor chip that faces in the first direction or at least partially on a first surface of the second semiconductor chip that faces in the first direction, wherein the hybrid diamond thermal interposer includes diamond particles within a metal.