Hybrid Diamond Thermal Interposer for Chip Heat and Stress Control
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high thermal performance without compromising mechanical integrity, particularly in high power and high performance applications like advanced packages, where thermal management is crucial for efficiency and longevity.
Innovation Solution
Incorporation of a hybrid diamond thermal interposer with a diamond skeleton and metal matrix, which provides superior thermal conductivity and a balanced coefficient of thermal expansion, ensuring effective heat dissipation while maintaining mechanical integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional thermal interface materials are used to improve thermal performance, then heat dissipation is enhanced, but mechanical integrity deteriorates due to thermomechanical stress and cracking
Solution Approach 1:
The patent employs a composite thermal interface material comprising diamond particles dispersed in a metal matrix (such as copper or silver). This composite structure combines the high thermal conductivity of diamond (500-2000 W/mK) with the ductility and toughness of metals, achieving superior thermal performance while maintaining mechanical integrity and resistance to thermomechanical stress during thermal cycling.
Solution Approach 2:
The invention modifies the thermal and mechanical parameters of the interface material by incorporating diamond particles with specific size distributions (e.g., 1-10 micrometers) and optimizing their concentration (30-70% by volume) within the metal matrix. These parameter changes enable the material to simultaneously achieve high thermal conductivity and appropriate mechanical properties for withstanding thermal expansion stresses.
2Temperature
If high thermal conductivity materials are used, then thermal performance improves, but coefficient of thermal expansion mismatch increases causing stress and reliability issues
Solution Approach 1:
The patent carefully selects and adjusts parameters including diamond particle size distribution (1-10 micrometers), volume concentration (30-70%), and metal matrix composition (copper, silver, or their alloys) to optimize both thermal conductivity and coefficient of thermal expansion. This parameter optimization enables the composite material to achieve high thermal performance while maintaining thermal expansion stability that matches semiconductor substrates during thermal cycling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid diamond thermal interposer significantly enhances thermal performance and reliability by reducing thermomechanical stress, preventing cracking and leaking of thermal interface materials, thereby improving the longevity and efficiency of semiconductor devices.
Implementation Method 1
the hybrid diamond thermal interposer includes diamond particles within a metal matrix
Implementation Method 2
provides superior thermal conductivity and a balanced coefficient of thermal expansion, ensuring effective heat dissipation while maintaining mechanical integrity
Data Source
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AI summary
Semiconductor devices and methods of manufacturing the semiconductor devices are provided. For example, a semiconductor device (1A) may include: a substrate (20); an interposer (50) at least partially on a first surface of the substrate (20) that faces in a first direction; a first semiconductor chip (70) on a first surface of the interposer (50) that faces in the first direction; a second semiconductor chip (80) at least partially on the first surface of the interposer (50), the second semiconductor chip (80) spaced apart from the first semiconductor chip (70) in a second direction that crosses the first direction; a hybrid diamond thermal interposer (90) at least partially on a first surface of the first semiconductor chip (70) that faces in the first direction or at least partially on a first surface of the second semiconductor chip (80) that faces in the first direction, wherein the hybrid diamond thermal interposer (90) includes diamond particles (94) within a metal.