Diamond Heterojunction Devices Using TMDC Monolayers

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Solution Overview

Problem

The high cost and technological challenges associated with diamond-based semiconductor devices, particularly the difficulty in achieving n-type doping, hinder their widespread adoption for high-speed and high-power applications in industries like telecommunications and power electronics.

Innovation Solution

The integration of a two-dimensional transition metal dichalcogenide (TMDC) monolayer with a p-type diamond base layer forms a p-n junction, eliminating the need for complex doping procedures and enabling scalable manufacturing of high-performance semiconductor devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If n-type doping is achieved in diamond through conventional methods, then the functionality of diamond-based semiconductor devices is improved, but the manufacturing complexity and cost increase significantly

Engineering Contradiction:

Improvefunctionality of diamond-based semiconductor devicesVSAvoidmanufacturing complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent uses an n-type semiconductor layer as an intermediary to provide the n-type functionality needed for semiconductor devices without requiring direct n-type doping of diamond. This intermediate layer simplifies the manufacturing process while maintaining device functionality, resolving the contradiction between achieving n-type functionality and avoiding complex doping procedures

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the approach from modifying diamond's electrical parameters through complex doping to using a different material layer with inherently different electrical properties. By changing from direct diamond modification to using an intermediate n-type layer, the manufacturing complexity is reduced while achieving the desired semiconductor functionality

Inventive Principle:

Principle #35Parameter changes

2Reliability

If n-type doping is achieved in diamond through conventional methods, then the functionality of diamond-based semiconductor devices is improved, but the manufacturing cost increases

Engineering Contradiction:

Improvefunctionality of diamond-based semiconductor devicesVSAvoidmanufacturing cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The n-type semiconductor layer serves as a cost-effective intermediary that provides the necessary n-type functionality without requiring expensive and complex n-type doping processes for diamond. This approach significantly reduces manufacturing costs while maintaining device functionality

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent employs a relatively simple n-type semiconductor layer instead of attempting to permanently modify the expensive diamond structure through complex doping. This substitutes a cheaper, easier-to-manufacture component for a costly and complex process, reducing overall manufacturing costs

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

3Reliability

If diamond-based semiconductor devices are manufactured with conventional doping methods, then the performance for high-speed and high-power applications is improved, but the scalability of production is reduced

Engineering Contradiction:

Improveperformance for high-speed and high-power applicationsVSAvoidscalability of production

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The n-type semiconductor layer acts as a scalable intermediary that can be easily integrated into diamond device structures through standard fabrication techniques. This approach enables mass production and scaling while maintaining the high-performance characteristics needed for high-speed and high-power applications

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent segments the device into distinct p-type diamond regions and n-type semiconductor layer regions, allowing each to be manufactured and optimized independently. This modular approach facilitates scalable production while maintaining the performance benefits of the heterojunction structure

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances current density and power handling capabilities while reducing manufacturing costs, making diamond-based semiconductor devices more viable for high-speed and high-power applications.

Implementation Method 1

A monolayer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween

Methodology Applied

Scientific EffectHeterojunction formation:

Data Source

PatentUS10186584B2Systems and methods for forming diamond heterojunction junction devices

Publication Date: 2019.01.22 UCHICAGO ARGONNE LLC

AI summary

A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.