Diamond Semiconductor Trench Structure for Dopant Control
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Solution Overview
Problem
The challenge in forming diamond semiconductor layers is the difficulty in controlling dopant concentration due to the dependence on plane orientation, which affects the semiconductor characteristics, particularly in achieving stable, low-on-resistance, and high-breakdown-voltage devices.
Innovation Solution
The use of a trench structure in diamond semiconductor devices allows for the formation of semiconductor layers with different plane orientations, enabling precise control of dopant concentration by suppressing dopant incorporation from the underlying layers, thereby improving the controllability of dopant concentration, especially in intrinsic or lightly-doped layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If diamond semiconductor layers are formed with different plane orientations to control dopant concentration, then manufacturing precision of dopant concentration is improved, but device complexity increases
Solution Approach 1:
The device is divided into multiple semiconductor layers with different plane orientations. The first diamond semiconductor layer has a first plane orientation while the second diamond semiconductor layer has a second plane orientation different from the first. This segmentation allows independent control of dopant concentration in each layer, resolving the contradiction by achieving precise dopant concentration control through structural division.
Solution Approach 2:
Different regions of the semiconductor device are given different plane orientations tailored to their specific functional requirements. The first diamond semiconductor layer uses a first plane orientation optimized for its characteristics, while the second diamond semiconductor layer uses a second plane orientation optimized for its characteristics. This local quality approach enables precise dopant concentration control in each region without unnecessarily complicating the entire device structure.
Data Source
AI summary
A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer.