Diamond Crystal XV Center Orientation Control

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Solution Overview

Problem

The effectiveness of devices utilizing diamond crystals with XV centers is hindered by the difficulty in controlling the preferential orientation of these centers, leading to misalignment with magnetic fields and laser beams, which degrades performance and results in a poor signal-to-noise ratio.

Innovation Solution

A method for manufacturing a device comprising a diamond crystal, a first laser radiation generator, and a second magnetic field generator, where the diamond crystal is grown with a specific orientation of XV centers, allowing for precise alignment of the magnetic field and laser radiation with respect to the XV centers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If substrates with specific crystal orientation are used to obtain preferentially oriented XV centers, then the orientation control of XV centers is improved, but the crystal growth rate decreases and substrate availability is reduced

Engineering Contradiction:
Improveorientation control of XV centersVSAvoidcrystal growth rate
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent applies preliminary action by pre-orienting the substrate with a specific crystal orientation (e.g., <110> or <100>) before diamond layer growth. This preliminary substrate preparation ensures that the XV centers formed during growth will have their quantification axes preferentially aligned with the substrate orientation, thereby achieving good orientation control without requiring complex in-situ control mechanisms during the growth process itself.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent utilizes parameter changes by selecting specific substrate crystal orientations (such as <110> or <100> directions) as a fundamental growth parameter. By changing this substrate orientation parameter, the patent achieves preferential alignment of XV centers along desired crystallographic directions, resolving the contradiction between orientation control and growth rate through optimized parameter selection.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If substrates enabling rapid growth and stable facets are used, then productivity is improved, but the preferential orientation of XV centers cannot be controlled

Engineering Contradiction:
Improvecrystal growth rateVSAvoidpreferential orientation of XV centers
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by pre-orienting the substrate with a specific crystal orientation (e.g., <110> or <100>) before diamond layer growth. This preliminary substrate preparation ensures that the XV centers formed during growth will have their quantification axes preferentially aligned with the substrate orientation, thereby achieving good orientation control without requiring complex in-situ control mechanisms during the growth process itself.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent utilizes parameter changes by selecting specific substrate crystal orientations (such as <110> or <100> directions) as a fundamental growth parameter. By changing this substrate orientation parameter, the patent achieves preferential alignment of XV centers along desired crystallographic directions, resolving the contradiction between orientation control and growth rate through optimized parameter selection.

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If XV centers are misaligned with magnetic field and laser beam, then device complexity is reduced, but performance and signal-to-noise ratio deteriorate

Engineering Contradiction:
Improvealignment complexityVSAvoidperformance and signal-to-noise ratio
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent applies preliminary action by pre-orienting the substrate with a specific crystal orientation (e.g., <110> or <100>) before diamond layer growth. This preliminary substrate preparation ensures that the XV centers formed during growth will have their quantification axes preferentially aligned with the substrate orientation, thereby achieving good orientation control without requiring complex in-situ control mechanisms during the growth process itself.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent utilizes parameter changes by selecting specific substrate crystal orientations (such as <110> or <100> directions) as a fundamental growth parameter. By changing this substrate orientation parameter, the patent achieves preferential alignment of XV centers along desired crystallographic directions, resolving the contradiction between orientation control and growth rate through optimized parameter selection.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables improved performance and a better signal-to-noise ratio by ensuring proper alignment of the XV centers with the magnetic field and laser radiation, thereby enhancing the functionality of devices such as quantum computers and spectrum analyzers.

Implementation Method 1

the growth step being a step of growth by chemical vapor deposition

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 2

the first generator being configured for illuminating a first face of the crystal with laser radiation

Methodology Applied
Scientific EffectLaser radiation: Laser

Implementation Method 3

the second generator being configured for changing a value of a magnetic field in at least a portion of the crystal

Methodology Applied
Scientific EffectMagnetic field: Magnetic Field

Data Source

PatentUS12241177B2Method for manufacturing a device comprising a diamond crystal
Publication Date: 2025.03.04 THALES SA
  • US12241177B2 patent drawing
  • US12241177B2 patent drawing
  • US12241177B2 patent drawing

AI summary

A method for manufacturing a device including a diamond crystal, the method including making available a substrate, growing a crystalline diamond layer on the substrate, the layer having a crystal lattice, the layer including at least a first set of XV centers in the crystal lattice, each XV center having a quantification axis, a main direction being defined for the first set, the quantification axes of the XV centers of the first set being parallel to the main direction, the normal direction being distinct from the main direction of the first set, removing a first part of the diamond layer in order to reveal a first face perpendicular to the main direction of the first set, and removing of a second part of the diamond layer in order to reveal a second face perpendicular to the first face.