Diblock Copolymer Blend for Perpendicular Orientation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional diblock copolymers face challenges in achieving perpendicular orientation of minority block material cylindrical holes in thin films, limiting their application in microelectronic devices due to restricted processing windows and inadequate etch resistance.
Innovation Solution
A diblock copolymer blend comprising >50 wt % ordered poly(styrene)-b-poly(methyl methacrylate) diblock copolymer and 1 to <50 wt % disordered poly(styrene)-b-poly(methyl methacrylate) diblock copolymer, with specific Flory-Huggins interaction parameters and molecular weight ranges, ensures perpendicular alignment of poly(methyl methacrylate) domains over a broad film thickness range, enhancing the process window.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional diblock copolymer materials are used to form thin films, then perpendicular orientation of minority block material can be achieved at specific film thickness (0.9 L0), but the processing window is severely restricted and film thickness must be controlled very precisely
Solution Approach 1:
The invention changes the compositional parameters of the diblock copolymer by creating a blend system with controlled ratios of different block copolymers (varying minority block volume fractions). This parameter change in composition enables perpendicular orientation over a broad film thickness range (0.5 L0 to 2 L0) rather than at a single critical thickness (0.9 L0), thereby expanding the processing window while maintaining manufacturing precision
Solution Approach 2:
The invention uses a composite material system consisting of a blend of two or more diblock copolymers with different compositions. The blend contains a first diblock copolymer with minority block volume fraction of 0.35-0.65 and a second diblock copolymer with minority block volume fraction of 0.15-0.35, creating a composite that achieves perpendicular orientation across a wide film thickness range, resolving the contradiction between precision and versatility
2Length of moving object
If film thickness is reduced to enable pattern formation in microelectronic devices, then device miniaturization is achieved, but etch resistance becomes inadequate
Solution Approach 1:
The invention changes the material composition parameters by using a diblock copolymer blend where the first component has a higher minority block volume fraction (0.35-0.65) providing etch resistance, while the blend ratio and second component adjust the effective film thickness. This parameter optimization allows thinner films to maintain adequate etch resistance during pattern transfer processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diblock copolymer blend achieves a high degree of perpendicular cylindrical hole orientation (>0.95) across a wide film thickness range (0.5 to 2 L0), improving device yields and etch resistance, thus overcoming the limitations of conventional materials.
Implementation Method 1
Certain asymmetric diblock copolymers have the ability to self assemble to form domains of the minority block material within the majority block material
Implementation Method 2
asymmetric diblock copolymers having regularly spaced pores have found utility
Implementation Method 3
wherein χNBCP1 is the product of the Flory-Huggins interaction parameter, χBCP1, of BCP1 at 225° C. and the degree of polymerization, NBCP1, of BCP1
Data Source
AI summary
A diblock copolymer blend containing a unique combination of an ordered poly(styrene)-b-poly(methyl methacrylate) diblock copolymer and a disordered poly(styrene)-b-poly(methyl methacrylate) diblock copolymer is provided. Also provided are substrates treated with the diblock copolymer blend.