DICE Latch Shared Active Region Layout for Soft Error Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices experience unstable memory states and high soft error rates due to radiation, particularly in low-power-driven devices, where the existing latch circuit structures fail to maintain stable logical states under ionizing radiation exposure.
Innovation Solution
The implementation of a dual interlocked storage cell (DICE) latch with a specific layout structure that includes alternately inversion-driven connection lines and separate active regions for transistors, along with a shared active region strategy for contiguous DICE latches to reduce the overall size while enhancing soft error rate characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional latch circuit structure is used, then the device complexity is low, but the soft error rate increases under radiation exposure
Solution Approach 1:
The latch circuit is segmented into multiple separate active regions (first active region and second active region) that are physically isolated from each other. Transistors within each active region operate independently, which prevents radiation-induced errors from propagating across the entire circuit. This segmentation strategy directly addresses the soft error problem while maintaining reasonable device complexity.
Solution Approach 2:
Connection lines are introduced as intermediary elements that selectively couple transistors between active regions. These connection lines are configured to transmit signals only between transistors at the same logical level (e.g., from first logic level transistors to second logic level transistors), preventing direct coupling between transistors at different logical levels. This intermediary structure maintains circuit functionality while preventing error propagation.
2Reliability
If transistors are isolated in separate active regions, then soft error rate decreases, but the area occupied by the latch circuit increases
Solution Approach 1:
Multiple transistors operating at the same logical level are merged into shared active regions. For example, first transistors at the same logic level share a common first active region, and second transistors at the same logic level share a common second active region. This merging strategy reduces the total area required compared to providing separate active regions for each transistor, while still maintaining the isolation benefits between different logical levels.
Solution Approach 2:
The connection lines serve multiple functions: they transmit signals between active regions, maintain logical level relationships, and prevent error propagation. By making the connection lines multi-functional, the design achieves better area efficiency without compromising the soft error rate improvement.
3Use of energy by moving object
If power supply voltage is reduced for low-power operation, then energy consumption decreases, but soft error rate increases
Solution Approach 1:
The circuit is designed with inherent error protection mechanisms before radiation exposure occurs. The separate active regions and selective connection lines create a protective structure that cushions against radiation-induced errors. This prior cushioning allows the circuit to operate at lower voltages with improved soft error characteristics compared to conventional designs.
Data Source
AI summary
A dual interlocked storage cell (DICE) latch may be provided. A semiconductor device may be provided. The semiconductor device may include a DICE latch.


