Semiconductor Die Air-Gap Layout for Dense Conductor Blocks
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Solution Overview
Problem
High integration density in semiconductor dies leads to reduced reliability due to increased parasitic capacitance between conductive features, which affects device performance and yield.
Innovation Solution
A semiconductor die structure with air gaps is introduced, where conductor blocks are separated by air gaps formed through a method involving the deposition of an energy removable layer and a capping dielectric layer, followed by a heat treatment process to create air gaps enclosed by liner layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If high integration density is implemented in semiconductor dies, then device functionality and capacity are improved, but parasitic capacitance between conductive features increases leading to reduced reliability
Solution Approach 1:
The patent divides the continuous dielectric medium into segmented regions by introducing air gaps between conductive features. This segmentation reduces the parasitic capacitance coupling between adjacent conductors while maintaining the high integration density layout, thereby resolving the contradiction between quantity of conductive elements and device reliability.
Solution Approach 2:
The patent introduces air gaps (porous regions) within the dielectric structure between conductive features. These air gaps have lower permittivity compared to solid dielectric materials, which reduces parasitic capacitance and improves signal integrity, thus enhancing device reliability while preserving high integration density.
2Quantity of substance
If conductor blocks are placed closer together to increase integration, then device capacity is improved, but parasitic capacitance and RC delay increase reducing performance
Solution Approach 1:
Air gaps are introduced between closely spaced conductor blocks to reduce parasitic capacitance. The lower permittivity of air compared to solid dielectric materials reduces the capacitive coupling, thereby decreasing RC delay and power consumption while maintaining high conductor density for improved device capacity.
3Reliability
If air gaps are introduced to reduce parasitic capacitance, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The air gaps are formed during the manufacturing process by preliminary patterning and etching steps that create void spaces in the dielectric layer before subsequent conductor deposition. This preliminary action integrates air gap formation into the existing manufacturing flow, reducing the need for additional complex processing steps while achieving the desired performance improvement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The air gaps effectively reduce parasitic capacitance, leading to improved device performance with decreased power consumption and RC delay, while increasing the yield rate of semiconductor devices.
Implementation Method 1
performing a heat treatment process to transform the energy removable layer into an air gap structure including an air gap and a liner layer enclosing the air gap
Data Source
AI summary
The present disclosure provides a semiconductor die structure including a substrate, a first supporting backbone, a first conductor block, and an air gap structure. The first supporting backbone is disposed on the substrate. The first conductor block is disposed on the first supporting backbone, and includes a first barrier layer and a first conductive layer disposed in the first barrier layer. The air gap structure is disposed on the substrate and in contact with the first supporting backbone and the first conductor block.