Semiconductor Die Blast Shielding for Fuse Energy Containment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional sacrificial fuse elements in semiconductor packages can cause significant energy release during an overcurrent event, leading to potential damage to adjacent components, such as printed circuit boards, due to heat and gas vaporization, which can rupture and fragment package materials.
Innovation Solution
A semiconductor package design that includes a sacrificial fuse element with a multilayer dielectric forming planar gaps or vias adjacent to the fuse element, which absorbs and deflects energy during a fusing event, mitigating damage outside the package by directing pressure downward and facilitating energy absorption through malleable materials or shock-absorbing materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a sacrificial fuse element is used to interrupt overcurrent, then circuit protection is achieved, but significant energy release causes package material rupture and fragment, potentially damaging adjacent components
Solution Approach 1:
A shock-absorbing material is introduced as an intermediary component positioned between the sacrificial fuse element and the semiconductor die. This mediator absorbs and deflects the energy released during fusing events, preventing direct transmission of mechanical stress and thermal effects to the semiconductor die and other sensitive components, thereby protecting adjacent components while maintaining circuit protection functionality
Solution Approach 2:
The harmful energy released during fuse element rupture is converted into a beneficial protective mechanism. The shock-absorbing material captures the otherwise destructive mechanical and thermal energy, transforming it into controlled deformation within the absorber material itself, thus protecting the semiconductor die from damage while the fuse performs its protective function
2Object-affected harmful factors
If a multilayer dielectric with planar gaps is used beneath the fuse element, then energy absorption and deflection is improved, but device complexity increases
Solution Approach 1:
The dielectric layer is segmented into a multilayer structure with alternating dielectric layers and conductive layers, creating planar gaps between them. This segmentation allows the structure to absorb and deflect energy more effectively during fusing events, as the gaps provide pathways for energy dissipation while the layered structure distributes mechanical stress, achieving improved energy absorption without requiring a complete redesign of the package architecture
Solution Approach 2:
The multilayer dielectric structure serves multiple functions: it provides electrical insulation, mechanical support, and energy absorption/deflection capabilities. By integrating these functions into a single structural element rather than adding separate components, the design achieves improved energy absorption while minimizing the increase in device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively interrupts high currents while minimizing damage beyond the package during an overcurrent event by absorbing and deflecting energy, thereby protecting adjacent components from the fusing event.
Implementation Method 1
The open circuit is created when current passes through the fuse element, causing the fuse element to heat enough that the fuse element melts or 'blows.'
Implementation Method 2
Conventional sacrificial fuse elements are composed of a metal filament that melts and creates an open circuit after a pre-determined amount of current flows through it.
Implementation Method 3
a multilayer dielectric between the sacrificial fuse element and the semiconductor substrate, the multilayer dielectric forming one or more planar gaps beneath a profile of the sacrificial fuse element
Implementation Method 4
The semiconductor substrate forms an array of vias adjacent to the sacrificial fuse element.
Data Source
AI summary
A semiconductor package includes a metallic pad and leads, a semiconductor die including a semiconductor substrate attached to the metallic pad, and a conductor including a sacrificial fuse element above the semiconductor substrate, the sacrificial fuse element being electrically coupled between one of the leads and at least one terminal of the semiconductor die, and a multilayer dielectric between the sacrificial fuse element and the semiconductor substrate, the multilayer dielectric forming one or more planar gaps beneath a profile of the sacrificial fuse element.