Semiconductor Die Bonding With Porous Oxide Interface Strengthening
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Solution Overview
Problem
Current semiconductor packages face challenges in achieving improved reliability and miniaturization, particularly in the bonding process between semiconductor dies, which affects the adhesive strength and yield of the packages.
Innovation Solution
A semiconductor package design that includes a silicon oxide layer with ultrafine pores between the first and second semiconductor dies, where the bonding layers are made of SiCN, and a method of fabricating this package by forming dangling bonds and coupling OH groups to enhance the bonding interface, leading to improved adhesive strength and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional bonding process is used between semiconductor dies, then the manufacturing process is simple, but the adhesive strength and reliability are insufficient
Solution Approach 1:
The silicon oxide layer is formed in advance between the bonding layers before the actual bonding process. This preliminary formation of the interlayer insulating layer with controlled thickness (50-200 nm) creates a prepared interface that enhances adhesive strength during subsequent bonding, resolving the contradiction by preparing the bonding interface beforehand rather than relying on simple direct bonding
Solution Approach 2:
The patent controls specific parameters of the silicon oxide layer including thickness (50-200 nm) and water content (0.1-10 ppm) to optimize bonding performance. By precisely controlling these parameters, the bonding process achieves improved reliability while maintaining manufacturing feasibility, thus resolving the contradiction between enhanced adhesive strength and process complexity
2Strength
If the bonding layer thickness is increased to improve bonding strength, then adhesive strength improves, but the overall package size increases
Solution Approach 1:
The patent achieves high bonding strength not by increasing bonding layer thickness but by controlling the silicon oxide layer thickness (50-200 nm) and water content (0.1-10 ppm). This parameter optimization allows thin bonding layers to achieve sufficient strength, thus improving bonding strength without increasing package volume
Solution Approach 2:
The patent uses a composite structure consisting of SiCN bonding layers with embedded silicon oxide interlayer. This composite material approach provides enhanced bonding strength through the synergistic effect of the bonding layers and the controlled silicon oxide interface, eliminating the need to increase individual layer thickness
3Reliability
If water content in the silicon oxide layer is increased to improve adhesive strength, then bonding reliability improves, but process control difficulty increases
Solution Approach 1:
The patent identifies and controls water content as a critical parameter (0.1-10 ppm) in the silicon oxide layer. By establishing this precise control range and implementing corresponding manufacturing processes, the patent achieves improved bonding reliability while maintaining manufacturability, thus resolving the contradiction between reliability improvement and control precision requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in enhanced adhesive strength and reliability of the semiconductor package, reducing process defects and improving yield by creating compressive stress through water molecules trapped in the silicon oxide layer's pores, thereby improving the bonding between the semiconductor dies.
Implementation Method 1
at least one pore is disposed in the silicon oxide layer, and the pore has a height of 1 Å to 2 nm
Implementation Method 2
creating compressive stress through water molecules trapped in the silicon oxide layer's pores
Implementation Method 3
performing a first bonding process to form a silicon oxide layer between the second bonding layer and the first bonding layer, and bonding the second bonding layer and the first bonding layer
Data Source
AI summary
The present disclosure relates to semiconductor packages and methods of fabricating the semiconductor packages. An example semiconductor package includes a first semiconductor die including a first substrate and a first bonding layer on the first substrate, a second semiconductor die disposed on the first semiconductor die, the second semiconductor die including a second substrate and a second bonding layer under the second substrate, and a silicon oxide layer interposed between the first semiconductor die and the second semiconductor die, where at least one pore is disposed in the silicon oxide layer, and the at least one pore has a height of 1 Å to 2 nm.