Semiconductor Die Direct Bonding With Reactive Interface Materials
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Solution Overview
Problem
Hybrid bonding processes in semiconductor manufacturing require high temperatures and pressures to form bonds, which can cause defects due to differing thermal expansion coefficients and result in bonds that lack the required strength for stacked assemblies.
Innovation Solution
The use of slightly reactive materials with imbalanced molecular ratios, such as dielectrics or polymers, that react at lower temperatures and pressures to form stronger bonds by moving towards a stoichiometrically balanced ratio, enhancing bond strength and manufacturing throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high temperatures and pressures are used in hybrid bonding processes, then bond formation occurs, but defects are caused due to differing thermal expansion coefficients
Solution Approach 1:
The patent changes the bonding parameters from high temperature and pressure to low temperature and pressure by using reactive materials with imbalanced molecular ratios that spontaneously react upon contact, resolving the contradiction between achieving bond formation and avoiding thermal expansion defects
Solution Approach 2:
The patent introduces reactive materials with imbalanced molecular ratios as intermediaries between the bonding surfaces. These materials act as mediators that facilitate bond formation through chemical reaction rather than thermal compression, eliminating the harmful thermal expansion effects
2Strength
If high temperatures are used in hybrid bonding processes, then surfaces are bonded together, but the resulting bond lacks the required strength
Solution Approach 1:
The patent replaces the mechanical/thermal bonding system with a chemical reaction system. Instead of using heat and pressure to force surfaces together, the reactive materials with imbalanced molecular ratios chemically react to form strong bonds at low temperatures, achieving both high bond strength and low processing temperature
3Productivity
If traditional fusion bonding is used, then bonds are formed between semiconductor dies, but manufacturing throughput is reduced due to high temperature requirements
Solution Approach 1:
The patent fundamentally changes the temperature parameter from high to low by replacing thermal bonding mechanisms with chemical reaction mechanisms. This allows manufacturing to proceed at lower temperatures, increasing throughput while maintaining bond quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method results in stronger bonds at lower temperatures and pressures, increasing manufacturing throughput and the lifespan of stacked assemblies while avoiding defects.
Implementation Method 1
reacting the first outer surface with the second outer surface. The reaction causes the first outer surface to bond to the second outer surface
Implementation Method 2
bonding the first surface with the second surface by diffusing the second material from the second dielectric to the first dielectric
Data Source
AI summary
A method for bonding semiconductor dies, resulting semiconductor devices, and associated systems and methods are disclosed. In some embodiments, the method includes depositing a first material on the first semiconductor die. The first material has a first outer surface and a first chemical composition at the first outer surface. The method also includes depositing a second material on the second semiconductor die. The second material has a second outer surface and a second chemical composition at the second outer surface that is different from the first chemical composition. The method also includes stacking the dies. The second outer surface of the second semiconductor die is in contact with the first outer surface of the first semiconductor die in the stack. The method also includes reacting the first outer surface with the second outer surface. The reaction causes the first outer surface to bond to the second outer surface.