Semiconductor Die Direct Bonding for Void-Induced Short Removal
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Solution Overview
Problem
Hybrid bonding processes in semiconductor manufacturing often result in voids at the bonding interface, leading to electrical and thermal shorts, which can cause stacked semiconductor assemblies to fail performance standards and reduce throughput.
Innovation Solution
A method involving the alignment and annealing of semiconductor dies to form direct bonds, followed by exposure to microwave radiation to excite a chemical constituent in voids, causing it to react with and degrade metal layers that could form shorts, thereby improving electrical and thermal performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If hybrid bonding processes are used to directly bond semiconductor dies, then the volume occupied by stacked die assemblies is reduced, but voids form at the bonding interface leading to electrical and thermal shorts
Solution Approach 1:
The patent applies microwave radiation to heat the voids at the bonding interface, converting the harmful voids into beneficial heated regions. This thermal energy activates chemical constituents within the voids that react with metal layers to prevent shorts, thereby transforming the defect into a useful function for improving electrical and thermal performance
Solution Approach 2:
The patent changes the physical and chemical parameters of the void environment by introducing chemical constituents and applying microwave radiation. This transforms the void from a static defect into a dynamic reaction zone where controlled chemical reactions occur, changing the electrical and thermal properties of the bonding interface
2Manufacturing precision
If extremely clean surfaces are required for hybrid bonding to avoid voids, then bonding quality improves, but manufacturing complexity and cost increase
Solution Approach 1:
The patent introduces chemical constituents as intermediaries that are placed within the voids at the bonding interface. These constituents mediate the interaction between the void environment and metal layers, enabling the voids to serve a beneficial function rather than requiring their complete elimination through complex surface preparation
Solution Approach 2:
Instead of requiring extremely clean surfaces to eliminate voids, the patent accepts the presence of voids and converts them into beneficial reaction zones by introducing chemical constituents and applying microwave radiation, thereby simplifying the surface preparation process while maintaining or improving bonding quality
3Reliability
If metal layers are present at bonding interfaces, then electrical connections are formed, but metal drift into voids creates electrical and thermal shorts
Solution Approach 1:
The patent uses microwave radiation to heat the voids containing metal layers, activating chemical constituents that react with the metal. This converts the harmful metal drift into a controlled chemical reaction that degrades the metal's conductivity, transforming the short-circuit risk into a protective mechanism
Solution Approach 2:
The chemical constituents introduced into the voids act as strong oxidants that react with metal layers when activated by microwave radiation. This accelerated oxidation degrades the metal's electrical and thermal conductivity, preventing shorts while maintaining necessary electrical connections
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces electrical and thermal shorts in stacked semiconductor assemblies, enhancing their performance to meet standards and increasing manufacturing throughput by eliminating defective assemblies.
Implementation Method 1
exposure to microwave radiation to excite a chemical constituent in voids
Implementation Method 2
causing it to react with and degrade metal layers
Implementation Method 3
alignment and annealing of semiconductor dies to form direct bonds
Implementation Method 4
strong covalent bonds
Data Source
AI summary
A stacked semiconductor device and systems and methods for producing the same are disclosed here. In some embodiments, the method includes aligning a first array of bond pads on an upper surface of a first semiconductor substrate with a second array of bond pads on a lower surface of a second semiconductor substrate. The method then includes annealing the stacked semiconductor device to bond the upper surface of the first semiconductor substrate to the lower surface of the second semiconductor substrate. The annealing results in at least one void between the upper surface and the lower surface that includes a layer of diffused metal. The layer of diffused metal extends from a first individual bond pad towards a second individual bond pad and forms an electrical or thermal short. The method then includes exposing the stacked semiconductor device to microwave radiation to excite a chemical constituent present in the void.