Semiconductor Die Conductive Path Layout for Compact Power Delivery
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Solution Overview
Problem
Conventional semiconductor die structures with through-silicon vias (TSVs) occupy a large area, leading to significant die area overhead and poor power delivery efficiency.
Innovation Solution
The implementation of conductive structures, including TSVs and conductive paths, that are strategically positioned to reduce die area overhead and enhance power delivery by optimizing the layout of conductive connections within the semiconductor die.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If through-silicon vias (TSVs) are used for conductive connections, then power delivery capability is improved, but die area overhead increases significantly
Solution Approach 1:
The patent transitions from conventional planar power delivery to three-dimensional vertical power delivery using TSVs. By stacking conductive layers and TSVs in the vertical dimension, the design achieves enhanced power delivery capability while maintaining a compact die footprint, effectively resolving the contradiction between power delivery and area overhead.
Solution Approach 2:
The patent implements nested conductive structures where TSVs are positioned within or adjacent to active device regions. This nesting approach allows conductive paths to be integrated within the device footprint rather than occupying separate area, thereby improving power delivery without proportionally increasing die area overhead.
2Area of stationary object
If TSV area is reduced to decrease die area overhead, then area efficiency is improved, but power delivery performance deteriorates
Solution Approach 1:
The patent applies local quality by varying TSV dimensions and distributions across different regions of the die. High-power regions receive denser TSV arrangements with larger cross-sections for optimal power delivery, while low-power regions use sparser or smaller TSVs to minimize area overhead. This localized optimization resolves the contradiction by matching TSV resources to actual power delivery needs.
Solution Approach 2:
The patent employs dynamic TSV configurations where conductive paths are selectively activated or deactivated based on operational requirements. This allows the effective TSV area to be adjusted dynamically, providing high power delivery capability when needed while minimizing the always-present area overhead for less demanding regions.
3Power
If conventional die structures with large TSV area are used, then power delivery paths are sufficient, but die area overhead increases and manufacturing cost increases
Solution Approach 1:
The patent designs TSV structures that serve multiple functions simultaneously: power delivery, signal transmission, and thermal management. This multi-functionality reduces the need for separate dedicated power delivery structures, thereby maintaining adequate power delivery paths while reducing overall die area overhead and manufacturing complexity.
Solution Approach 2:
The patent merges power delivery TSVs with signal TSVs and ground TSVs into integrated conductive structures where possible. By combining multiple functions into shared TSV infrastructure, the total TSV area required is reduced compared to having separate dedicated structures for each function, thereby lowering die area overhead and manufacturing cost while maintaining sufficient power delivery capability.
Data Source
AI summary
Some embodiments include an apparatus having a die including circuitry; a first conductive path located at a first side of the die; a second conductive path located at a second side of the die and coupled to the circuitry; a conductive structure extending between the first and second sides of the die, the conductive structure including a first end coupled to the first conductive path and a second end coupled to the second conductive path; and a conductive bump coupled to the conductive structure through the first conductive path.