Semiconductor Die Contact Pad Layout for Stress and Heat Relief
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Solution Overview
Problem
Semiconductor dies with silicon carbide MOSFETs face challenges in stress concentration and heat accumulation in the peripheral areas, leading to potential cracking and reliability issues during die singulation and packaging.
Innovation Solution
The semiconductor die design features first transistors with hexagonal-shaped contact pads in the peripheral area and a second transistor with rectangular-shaped contact pads in the central area, distributing stress and heat more evenly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If contact pads are disposed in the peripheral area of the semiconductor die, then the transistor density is increased, but stress concentration and heat accumulation occur leading to contact pad cracking
Solution Approach 1:
The patent applies different geometric shapes to contact pads based on their location: hexagonal shapes for peripheral area contact pads and rectangular shapes for central area contact pads. This local differentiation allows the peripheral contact pads to better withstand stress and heat while maintaining high transistor density throughout the die.
2Ease of manufacture
If rectangular contact pads are used in the peripheral area, then the manufacturing process is simple, but stress concentration occurs at the corners leading to cracking
Solution Approach 1:
The patent uses hexagonal contact pad shapes in the peripheral area, which have rounded corners compared to rectangular shapes. This geometric modification reduces stress concentration at the corners while maintaining ease of manufacturing through standard photolithography processes.
3Reliability
If hexagonal contact pads are used in the peripheral area, then stress concentration and heat accumulation are reduced, but the manufacturing complexity increases
Solution Approach 1:
The patent implements hexagonal contact pad shapes only in the peripheral area where stress and heat concentration occur, while maintaining simple rectangular shapes in the central area. This localized application of geometric complexity minimizes manufacturing complexity while maximizing reliability benefits where needed.
Data Source
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AI summary
A semiconductor die includes a plurality of first transistors and a second transistor. The first transistors are disposed in a peripheral area of the semiconductor die. Each of the first transistors has a first contact pad. In a top view, the first contact pad of each of the first transistors has a first outer edge in a hexagonal shape. The second transistor is disposed in a central area of the semiconductor die. The second transistor has a second contact pad. In the top view, the second contact pad has a second outer edge in a rectangular shape. The peripheral area surrounds the central area. The first contact pads of the first transistors collectively surround the second contact pad of the second transistor.