Semiconductor Die Edge Detection for Sawing-Induced Cracks
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The sawing process in semiconductor manufacturing often damages dies due to mechanical stress, leading to cracks and delamination in low-k dielectric materials, which can result in performance degradation or device failure, and existing defect detection methods are limited in accurately assessing these defects.
Innovation Solution
A semiconductor device and method that includes a substrate with detecting devices and probe pads between the circuit region and outer border, along with a seal ring, to detect and assess cracks and delamination by determining the connection status of the detecting devices, which indicates the integrity of the seal ring and dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the sawing process is used to separate dies, then productivity is improved, but the die integrity deteriorates due to mechanical stress causing cracks and delamination
Solution Approach 1:
The patent applies preliminary action by forming detecting devices and seal rings on the wafer before the sawing process. These structures are prepared in advance to detect and prevent defects that may occur during subsequent die separation, allowing the sawing process to proceed while maintaining die integrity through early defect detection and prevention mechanisms
2Difficulty of detecting and measuring
If existing defect detection methods are used, then some defects can be identified, but measurement precision is insufficient for accurately assessing cracks and delamination in low-k dielectric materials
Solution Approach 1:
The patent introduces detecting devices as intermediary structures that mediate between the defects (cracks and delamination) and the measurement system. These detecting devices are specifically designed to interact with low-k dielectric materials and provide enhanced detection capability, serving as a bridge that improves measurement precision for defect assessment without requiring direct observation of the defects themselves
Data Source
AI summary
A method for detecting defects in a semiconductor device including singulating a die having a substrate including a circuit region and an outer border, a plurality of detecting devices disposed over the substrate and located between the circuit region and the outer border, a first probe pad and a second probe pad electrically connected to two ends of each detecting device, and a seal ring located between the outer border of the die and the detecting devices. The method further includes probing the first probe pad and the second probe pad to determine a connection status of the detecting device, and recognizing a defect when the connection status of the detecting device indicates an open circuit.