Die-Edge Guard Ring Structure for Hermetic Backside Contacts
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Solution Overview
Problem
Conventional integrated circuit fabrication processes face challenges in scaling to smaller nodes due to variability, necessitating new methodologies to prevent moisture breach and crack arrest at the die edge, especially with direct backside contact schemes.
Innovation Solution
Implementing backside contact based die edge guard rings that create a full metal wall at the die edge, providing a hermetic seal and crack arrest mechanism compatible with direct backside contact nanoribbon devices, using a combination of metal layers and trench structures to ensure protection of internal circuitry.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If direct backside contact schemes are implemented to enable scaling, then device density and capacity are improved, but susceptibility to moisture breach and die cracking increases
Solution Approach 1:
A hermetic seal structure is introduced as an intermediary element between the direct backside contact and the external environment. This seal acts as a protective mediator that allows the direct backside contact scheme to function while blocking moisture and mechanical stress paths, thus enabling both high device density and reliable moisture protection
2Ease of manufacture
If conventional fabrication processes are used, then manufacturing simplicity is maintained, but variability limits scaling to smaller nodes
Solution Approach 1:
The fabrication process is segmented into distinct stages: forming the hermetic seal structure first, then implementing the direct backside contact scheme, and finally completing the device fabrication. This segmentation allows each stage to be optimized independently, maintaining manufacturing simplicity while achieving the precision required for scaling to smaller nodes
Data Source
AI summary
Guard rings are described. In an example, a semiconductor die includes an active device layer including a plurality of nanoribbon devices. A dielectric structure is over the active device layer. A first die-edge metal guard ring is in the dielectric structure and around an outer perimeter of the plurality of nanoribbon devices. A plurality of metallization layers is in the dielectric structure and within the first die-edge metal guard ring. A plurality of direct backside contacts extend to the active device layer. A plurality of backside metallization structures is beneath the plurality of direct backside contacts. The plurality of direct backside contacts are connected to the plurality of backside metallization structures. A second die-edge metal guard ring is laterally around the plurality of backside metallization structures.