Semiconductor Die Edge Protection Without Particle-Generating Dicing
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Solution Overview
Problem
Conventional dicing techniques for semiconductor die separation generate particles that cause yield loss and are incompatible with advanced materials, leading to reliability issues and challenges in integrating new materials and deploying advanced packaging techniques.
Innovation Solution
A passivation layer is applied around the edges of semiconductor dies, including a diffusion barrier, and an alternative die separation method that eliminates conventional dicing steps by using trenches filled with an adhesive material, allowing for the integration of new materials and reducing contaminants, while also reducing wafer-level mechanical stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional dicing techniques are used for semiconductor die separation, then die separation is achieved, but particles are generated causing yield loss
Solution Approach 1:
The patent extracts the harmful dicing step from the semiconductor manufacturing process by replacing it with an adhesive release method. Individual dies are separated by releasing them from the carrier substrate using adhesive material, completely eliminating the particle-generating dicing operation while maintaining die separation functionality
Solution Approach 2:
The patent introduces an adhesive material as an intermediary between the carrier substrate and semiconductor dies. This adhesive layer enables die attachment during processing and subsequent controlled release for separation, serving as a mediator that eliminates the need for direct mechanical dicing of the dies themselves
2Productivity
If conventional dicing techniques are used, then die separation is achieved, but compatibility with advanced materials is lost
Solution Approach 1:
The patent removes the dicing operation from the process flow, eliminating the mechanical or laser cutting step that is incompatible with advanced materials. Die separation is achieved through adhesive release instead, which is universally compatible with all semiconductor materials including advanced heterogeneous structures
Solution Approach 2:
The adhesive material serves as an intermediary that enables processing and separation without direct contact or force applied to the semiconductor die edges. This indirect separation method preserves the integrity of advanced materials that would be damaged by conventional dicing blades or lasers
3Productivity
If dicing is used for die separation, then individual dies are obtained, but mechanical stress and contaminants are introduced
Solution Approach 1:
The patent converts the potentially harmful mechanical stress of dicing into a beneficial controlled adhesive release process. The adhesive material, which could be seen as an added complexity, actually protects dies from mechanical stress by enabling a stress-free separation method that releases dies without force or contact
Solution Approach 2:
The adhesive layer acts as a protective intermediary during processing and separation. It enables die attachment for handling without direct mechanical gripping, and provides a controlled release mechanism that separates dies without exposing them to contaminants or mechanical stress from dicing blades
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach decreases particle counts, improves yield and reliability, facilitates the integration of new materials, and reduces production costs by enabling thinner semiconductor dies and more efficient packaging, while being compatible with advanced packaging techniques.
Implementation Method 1
filling each of the plurality of trenches with an adhesive material
Implementation Method 2
A passivation layer is applied around the edges of semiconductor dies, including a diffusion barrier
Data Source
AI summary
Methods for protecting edges of semiconductor dies are disclosed. Further, the disclosed methods provide for separating the semiconductor dies without using a dicing technique. In one embodiment, a plurality of trenches may be formed on a front side of a substrate including a plurality of semiconductor dies. Individual trenches may correspond to scribe lines of the substrate where each trench includes a depth greater than a final thickness of the semiconductor dies. A dielectric layer may be formed on sidewalls of the trenches, thereby protecting the edges of the semiconductor dies, prior to filling the trenches with an adhesive material. Subsequently, the substrate may be thinned from a back side such that the adhesive material in the trenches may be exposed from the back side. The adhesive material may be removed to singulate individual semiconductor dies of the plurality from the substrate.