Semiconductor Die Edge Shielding for Particle-Free Singulation
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Solution Overview
Problem
Conventional dicing techniques for semiconductor packages generate particles and are incompatible with advanced materials, leading to yield loss and reliability issues, and hinder the integration of new materials and advanced packaging techniques.
Innovation Solution
The implementation of protective metallic layers around semiconductor die edges, including diffusion barriers, to shield from electromagnetic interference and contaminants, and alternative die separation techniques that reduce particle generation and enable accurate bond line thickness estimation for thermal compression bonding, while allowing for non-contact die transfers and improved heat management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional dicing techniques are used to separate semiconductor dies, then die separation is achieved, but particles are generated causing yield loss and reliability issues
Solution Approach 1:
The patent extracts and removes the problematic dicing blade from the process entirely. Instead of using mechanical dicing blades that generate particles, the invention uses a carrier wafer with adhesive material that allows for clean die separation through adhesive removal, eliminating the source of particle contamination while maintaining efficient die separation.
Solution Approach 2:
The patent replaces the mechanical dicing blade system with a chemical/adhesive-based separation system. The carrier wafer uses adhesive material to bond dies during processing, and separation is achieved by removing the adhesive rather than mechanically cutting through the dies, thereby substituting a particle-generating mechanical process with a cleaner chemical separation process.
2Productivity
If conventional dicing techniques are used, then die separation is achieved, but compatibility with advanced materials is lost
Solution Approach 1:
The patent introduces a carrier wafer with adhesive material as an intermediary between the semiconductor dies and the dicing process. This intermediary protects the advanced materials during processing and enables separation without direct mechanical contact with the dies themselves, making the process compatible with sensitive advanced materials that cannot withstand conventional dicing.
Solution Approach 2:
The patent replaces the mechanical dicing blade that is incompatible with advanced materials with a non-contact adhesive removal process. This substitution eliminates mechanical stress and particle contamination that would damage advanced materials, while still achieving efficient die separation through the adhesive carrier system.
3Length of stationary object
If semiconductor dies are thinned to reduce package height, then package height is reduced, but die edge protection becomes critical to prevent cracks
Solution Approach 1:
The patent applies protective coating material to the die edges before the thinning and separation processes. This beforehand protection cushions the weakened thin die edges against mechanical stress and prevents cracks during handling and separation, enabling the use of thin dies for reduced package height without sacrificing structural integrity.
Solution Approach 2:
The patent uses a thin film protective coating applied to die edges to provide reinforcement. This thin film layer adds strength to the vulnerable thin die edges without significantly increasing thickness, allowing the dies to maintain their reduced thickness for low package height while gaining the necessary edge strength for safe processing.
4Strength
If protective layers are added to die edges, then crack prevention is improved, but process complexity increases
Solution Approach 1:
The patent merges the protective coating application with the existing carrier wafer attachment process. The protective coating is applied to die edges while they are mounted on the carrier wafer, combining two functions (protection and handling) into a single integrated process step, thereby adding minimal complexity while achieving crack prevention.
Solution Approach 2:
The protective coating material serves multiple functions: it protects die edges from cracks, provides a bonding surface for the carrier wafer adhesive, and facilitates clean separation during die release. This multi-functionality reduces the need for additional separate process steps, minimizing the increase in process complexity while achieving comprehensive die edge protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution reduces cracks and contamination, enhances yield and reliability, facilitates the integration of new materials, and supports advanced packaging techniques by minimizing particle generation and ensuring precise bonding, thereby reducing production costs and enabling thinner semiconductor dies for reduced package heights.
Implementation Method 1
a metallic layer surrounding a sidewall of the semiconductor die
Implementation Method 2
a diffusion barrier between the sidewall and the metallic layer, wherein the diffusion barrier is configured to block one or more metallic constituents of the metallic layer from diffusing into a semiconductor substrate
Data Source
AI summary
Semiconductor dies with edges protected and methods for generating the semiconductor dies are disclosed. Further, the disclosed methods provide for separating the semiconductor dies without using a dicing technique. In one embodiment, trenches are formed on a front side of a substrate including semiconductor dies. Individual trenches correspond to scribe lines of the substrate where each trench has a depth greater than a final thickness of the semiconductor dies. A composite layer may be formed on sidewalls of the trenches to protect the edges of the semiconductor dies. The composite layer includes a metallic layer that shields the semiconductor dies from electromagnetic interference. Subsequently, the substrate may be thinned from a back side to singulate individual semiconductor dies from the substrate.