Die Fabric on Package Integration of Compound Semiconductors for RF Power Efficiency
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Solution Overview
Problem
Current RF circuits for high-frequency wireless applications, such as 5G and WiGig, face challenges with low power efficiency and high thermal dissipation due to the use of CMOS technology on silicon substrates, which results in lower system performance and increased thermal requirements.
Innovation Solution
The integration of compound semiconductor devices, such as GaAs and GaN, on a die fabric on package with CMOS technology, along with integrated passive devices, to form high-frequency transceivers, allowing for optimized performance, reduced thermal requirements, and improved power amplifier efficiencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If CMOS technology on silicon substrates is used for high-frequency RF circuits, then manufacturing cost and integration are improved, but power efficiency deteriorates and thermal dissipation increases
Solution Approach 1:
The patent segments the RF circuit into two distinct parts: CMOS-based circuits fabricated on silicon substrates and compound semiconductor devices fabricated on separate substrates. This segmentation allows each part to be optimized for its specific function - CMOS for integration and cost-effectiveness, compound semiconductors for power efficiency - while resolving the contradiction between manufacturing ease and power efficiency
Solution Approach 2:
The patent employs a composite structure combining silicon substrates with CMOS circuits and compound semiconductor substrates with high-frequency devices. This composite approach leverages the advantages of both material systems - the mature manufacturing and integration capabilities of silicon CMOS and the superior power efficiency and high-frequency performance of compound semiconductors - thereby resolving the technical contradiction
2Ease of manufacture
If CMOS technology on silicon substrates is used for high-frequency RF circuits, then manufacturing cost and integration are improved, but thermal dissipation increases
Solution Approach 1:
By segmenting the RF circuit into CMOS portions on silicon substrates and high-frequency power portions on compound semiconductor substrates, the patent isolates the thermal generation sources. Compound semiconductors inherently generate less heat for the same power output at high frequencies, thereby reducing overall thermal dissipation while preserving the manufacturing advantages of CMOS
Solution Approach 2:
The patent introduces an intermediary substrate structure that couples the CMOS silicon substrate with the compound semiconductor substrate. This intermediary arrangement allows thermal management optimization where compound semiconductors handle high-power high-frequency functions with lower thermal dissipation, while CMOS handles integration and control functions
3Use of energy by moving object
If compound semiconductor devices are integrated on die fabric on package with CMOS technology, then power amplifier efficiencies are improved and thermal dissipation is reduced, but device complexity increases
Solution Approach 1:
The patent segments the device into modular components - CMOS circuits on silicon substrates and compound semiconductor devices on separate substrates - that can be independently optimized and then integrated. This segmentation manages complexity by allowing each segment to be designed and fabricated using established processes, reducing the overall system complexity despite the multi-material integration
Solution Approach 2:
The patent creates a universal integration platform using die fabric on package technology that can accommodate both CMOS and compound semiconductor devices. This universal approach manages complexity by providing a standardized integration methodology that handles the multi-functionality of combining different semiconductor technologies in a single system
Data Source
AI summary
Embodiments of the invention include a microelectronic device that includes a first die having a silicon based substrate and a second die coupled to the first die. In one example, the second die is formed with compound semiconductor materials. The microelectronic device includes a substrate that is coupled to the first die with a plurality of electrical connections. The substrate including an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.