Semiconductor Die Insulating Layers for Sidewall Moisture Protection
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Solution Overview
Problem
Existing semiconductor manufacturing processes struggle to effectively protect semiconductor dies from external environmental elements such as moisture, contaminants, and light, particularly in flipchip configurations where surfaces remain exposed.
Innovation Solution
The formation of insulating layers around semiconductor dies using materials like epoxy or polymer, which are applied over the active surface and side surfaces of the dies, providing environmental protection and structural support.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an encapsulant or molding compound is applied over the semiconductor die, then the semiconductor die is protected from moisture and contaminants, but the side surfaces and exposed surfaces remain vulnerable to environmental elements
Solution Approach 1:
The patent applies conformal insulating layers (such as spin-coated photoresist or deposited dielectric films) that form thin film coatings over the side surfaces and exposed surfaces of the semiconductor die. These flexible thin films conform to the complex three-dimensional geometry of the die, including vertical sidewalls and top surfaces, providing continuous environmental protection that complements the encapsulant molding compound.
Solution Approach 2:
The patent transitions from two-dimensional planar protection (encapsulant on top surface) to three-dimensional omnidirectional protection by applying insulating layers that coat vertical side surfaces and conform to the die's geometry in multiple dimensions. This multi-dimensional approach ensures all exposed surfaces are protected, not just the top surface.
2Object-affected harmful factors
If discrete insulating layers are applied to each surface of the semiconductor die, then comprehensive environmental protection is achieved, but the manufacturing process complexity increases
Solution Approach 1:
The patent combines multiple protective functions into a single integrated manufacturing flow. The conformal insulating layers are applied in the same manufacturing sequence as the encapsulant process, and the insulating layers serve dual purposes: providing environmental protection and enabling subsequent singulation by being removed as a sacrificial layer. This merging reduces overall process complexity despite adding protective coverage.
Solution Approach 2:
The patent applies the conformal insulating layers before the singulation step, allowing these layers to serve as a sacrificial protective coating during manufacturing. The insulating layers are deposited in advance, protect the die through subsequent processing steps, and are then selectively removed to enable die separation, eliminating the need for separate protective measures during singulation.
3Strength
If insulating layers are formed around the semiconductor die, then structural support and environmental isolation are improved, but the manufacturing precision requirements increase
Solution Approach 1:
The patent employs self-aligned conformal deposition processes (such as spin coating or chemical vapor deposition) where the insulating layers automatically conform to the die's existing geometry and topology. The deposition process itself provides the alignment and uniformity, eliminating the need for precise manual positioning or complex masking steps. The layers self-adjust to cover all exposed surfaces uniformly.
Solution Approach 2:
The patent controls the thickness and properties of the conformal insulating layers by adjusting deposition parameters (such as spin coating speed, deposition temperature, or film composition) rather than relying on precise geometric positioning. This parameter-based control allows for uniform layer formation with standard manufacturing tolerances, reducing the precision requirements for the overall process.
Data Source
AI summary
A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.