Die Isolation Kerf Structure for Lead Frame Semiconductor Packaging

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Solution Overview

Problem

Traditional semiconductor packaging methods face challenges in assembly cost reduction and miniaturization, particularly in efficiently integrating semiconductor chips with lead frames while ensuring electrical isolation and reliable operation.

Innovation Solution

A semiconductor package design that includes a microelectronic die with an electrically conductive substrate, featuring an isolation dielectric layer on the back surface extending onto perimeter sidewalls, and a lead frame with electrically conductive members, where the isolation dielectric layer is attached to the lead frame, forming isolation kerfs in the substrate to facilitate singulation and electrical connections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If traditional semiconductor packaging methods are used with lead frames, then electrical connections and structural support are achieved, but assembly cost reduction and miniaturization are limited

Engineering Contradiction:
Improveassembly cost reductionVSAvoidpackaging structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent extracts the electrical connection function from the traditional lead frame structure by directly bonding the conductive substrate to external circuitry, eliminating the need for separate lead frames and reducing assembly complexity

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent merges the substrate and lead frame functions into a single integrated structure where the conductive substrate serves both as the device base and electrical connection element, simplifying the packaging structure

Inventive Principle:
Principle #5Merging (Combining)

2Volume of moving object

If chips are attached to lead frames for electrical connections, then electrical connectivity is achieved, but miniaturization is hindered

Engineering Contradiction:
Improvepackage sizeVSAvoidintegration efficiency
Core Design Contradiction:
Volume of moving objectVSEase of operation

Solution Approach 1:

The patent combines the chip mounting and electrical connection functions into a single bonding step by directly attaching the conductive substrate to external circuitry, eliminating the need for separate lead frame integration and enabling miniaturization

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If conventional packaging structures are used, then structural support is provided, but electrical isolation between substrate and leads is insufficient

Engineering Contradiction:
Improveelectrical isolationVSAvoidisolation structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent introduces an intermediate insulating layer between the conductive substrate and external leads, providing effective electrical isolation while maintaining a simple overall structure that does not require complex isolation mechanisms

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20250336747A1Semiconductor package with die isolation
Publication Date: 2025.10.30 TEXAS INSTRUMENTS INC
  • US20250336747A1 patent drawing
  • US20250336747A1 patent drawing
  • US20250336747A1 patent drawing

AI summary

A semiconductor package includes a microelectronic die with an electrically conductive substrate that has an isolation dielectric layer on a back surface of the substrate. The isolation dielectric layer extends onto perimeter sidewalls of the substrate. The isolation dielectric layer on the back surface is attached to an electrically conductive member of a lead frame. The isolation dielectric layer isolates the substrate from the electrically conductive member. The microelectronic die is formed by forming isolation kerfs in the substrate, extending from the back surface. Sides of the isolation kerfs form perimeter sidewalls of the substrate. The isolation dielectric layer is formed on the back surface and in the isolation kerfs. The microelectronic die is singulated through the isolation kerfs. The isolation dielectric layer remains on the back surface and the perimeter sidewalls.