Semiconductor Die Metallization with Oxide Passivation Against Cracking
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Solution Overview
Problem
The existing semiconductor die technologies face challenges in forming reliable metallization structures with fine features, which can lead to high electric fields, mechanical stress, and susceptibility to cracking and corrosion, particularly in power devices with vertical field effect transistors.
Innovation Solution
A semiconductor die is developed with a metallization layer comprising titanium (Ti), titanium nitride (TiN), and tungsten (W) layers, topped with a silicon oxide passivation layer, allowing for fine structured conductor lines and reduced mechanical stress, thereby minimizing cracking and corrosion risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If fine structured conductor lines are formed using Ti/TiN/W metallization, then manufacturing precision is improved, but susceptibility to cracking and corrosion increases due to high electric fields at sharp edges
Solution Approach 1:
A silicon oxide passivation layer is introduced as an intermediary between the Ti/TiN/W metallization and the external environment. This passivation layer mediates the interaction by providing mechanical protection against cracking and corrosion while allowing the fine structured conductor lines to maintain their precise geometry for low-resistance connections.
Solution Approach 2:
The solution employs a composite structure combining Ti/TiN/W metallization layers with a silicon oxide passivation layer. The metallization provides excellent electrical conductivity and fine structuring capability, while the silicon oxide provides mechanical protection, creating a composite system that achieves both precision and reliability.
2Reliability
If thick passivation is applied to reduce mechanical stress, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent optimizes the thickness parameter of the silicon oxide passivation layer to achieve the right balance between mechanical stress resistance and device complexity. By carefully selecting the passivation thickness, sufficient protection against cracking and corrosion is provided without unnecessarily increasing device complexity or affecting fine structured conductor line performance.
Data Source
AI summary
A semiconductor die is described. The semiconductor die includes a semiconductor body having an active region, a metallization formed on the semiconductor body, and a passivation formed on the metallization. The metallization includes at least one of a titanium layer, a titanium nitride layer, and a tungsten layer. The passivation includes a silicon oxide layer. Corresponding methods of manufacturing and using the semiconductor die are also described.