Die-Package Interconnect Layout for Direct Thermal Conduction
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Solution Overview
Problem
Existing semiconductor device packages face challenges in efficiently conducting thermal energy away from high thermal density devices like high electron mobility transistors (HEMTs) due to barriers in thermal conduction paths, which can lead to overheating and potential damage.
Innovation Solution
The implementation of a die-package interconnect with a more direct thermal conduction path, utilizing a metallization structure and insulation layers with varying thicknesses, and a die-package interconnect that overlaps and bridges between the semiconductor substrate and the package substrate, reducing insulation layers to enhance thermal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If insulation layers with uniform thickness are used in the die-package interconnect, then electrical insulation is maintained, but thermal conduction efficiency is reduced
Solution Approach 1:
The patent applies local quality by varying the thickness of insulation layers in different regions. The first insulation layer has a first thickness in a first region and a second thickness in a second region, where the second thickness is less than the first thickness. This allows the insulation layer to provide adequate electrical insulation where needed while minimizing thermal resistance in regions requiring better thermal conduction, thus resolving the contradiction between electrical insulation and thermal conduction efficiency.
2Loss of energy
If a direct thermal conduction path is created by having the die-package interconnect overlap the transistor, then thermal conduction efficiency is improved, but electrical insulation risk increases
Solution Approach 1:
The patent uses local quality by implementing varied insulation layer thicknesses in specific regions. The first insulation layer has different thicknesses in different regions, and the second insulation layer has a thickness that varies across regions. This allows direct thermal conduction paths to be created where thermal performance is critical while maintaining adequate electrical insulation in other areas, thus resolving the contradiction between thermal conduction efficiency and electrical insulation reliability.
3Loss of energy
If insulation layers are reduced to enhance thermal conductivity, then thermal conduction efficiency is improved, but electrical insulation capability is weakened
Solution Approach 1:
The patent applies local quality by having different insulation layer thicknesses in different regions. The first insulation layer has a first thickness in a first region and a second thickness in a second region, and the second insulation layer has varying thickness across regions. This regional variation allows the structure to provide enhanced thermal conductivity where needed while maintaining adequate electrical insulation capability in other areas, thus resolving the contradiction between thermal conduction efficiency and electrical insulation capability.
Solution Approach 2:
The patent uses segmentation by dividing the insulation structure into multiple layers (first insulation layer and second insulation layer) with different thickness characteristics in different regions. This segmented approach allows each layer to contribute differently to thermal and electrical properties, enabling the system to achieve both improved thermal conduction and maintained electrical insulation capability simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration provides improved thermal conduction efficiency, reducing the risk of overheating and enhancing the operational stability of high thermal density devices by creating a more direct and effective thermal energy transfer path from the semiconductor substrate to the package substrate.
Implementation Method 1
die-package interconnect to facilitate thermal conduction... provides improved thermal conduction efficiency... creating a more direct and effective thermal energy transfer path
Data Source
AI summary
The present disclosure generally relates to die-package interconnect in a semiconductor device assembly to facilitate thermal conduction. In an example, a semiconductor device assembly includes a semiconductor substrate, a metallization structure, a package substrate, a die-package interconnect, and one or more insulation layers. The metallization structure is on the semiconductor substrate and includes a first metal layer. The die-package interconnect is between the metallization structure and a second metal layer of the package substrate. The die-package interconnect overlaps at least part of a transistor on the semiconductor substrate. The insulation layer(s) are on the metallization structure and have a first portion having a first thickness and a second portion having a second thickness. The first portion is outside a footprint of the transistor. The second portion is between the die-package interconnect and the at least part of the transistor. The first thickness being larger than the second thickness.