Semiconductor Package Die Pad Structure for Bond Wire Clearance
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining a thin profile while ensuring adequate bonding wire loop height to prevent contact with the mounting portion, especially when thinner semiconductor elements and smaller sealing resin thickness are required, leading to potential bonding wire contact issues.
Innovation Solution
The semiconductor device incorporates a conductive member with a die pad portion featuring a contact avoidance surface that overlaps with the bonding wires, along with a sealing resin design that includes grooves or protrusions to enhance creepage distance and prevent wire contact, while allowing for improved heat dissipation and mounting strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the semiconductor element is made thinner and the sealing resin thickness is reduced, then the device achieves a thinner profile, but the bonding wire loop height decreases causing the wire to contact the mounting portion
Solution Approach 1:
The invention introduces a vertical protrusion structure on the mounting portion that extends into the sealing resin thickness direction. This creates a new spatial dimension for wire loop clearance, allowing the wire to clear the mounting portion vertically rather than relying solely on horizontal loop height, thus solving the contact issue in thin-profile devices
Solution Approach 2:
The protrusion acts as an intermediary structure between the mounting portion and the bonding wire. By extending into the sealing resin, it creates intermediate clearance space that prevents direct contact between the wire and mounting portion, enabling thinner device profiles while maintaining wire clearance
2Power
If the diameter of the bonding wire is increased to carry large current, then current carrying capacity improves, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The invention segments the wire loop path by introducing the protrusion structure that creates a defined clearance zone. This segmentation allows the wire to follow a simplified path with guaranteed clearance, reducing manufacturing complexity even for larger diameter wires used for high current applications
Data Source
AI summary
A semiconductor device includes a semiconductor element, a first lead including a die pad portion, the die pad portion including a first lead obverse surface facing a first side in a thickness direction and carrying the semiconductor element, a first lead reverse surface facing a second side in the thickness direction, and a first lead side surface facing a first side in a first direction; a second lead apart from the die pad portion toward the first side in the first direction; and a wire conductively bonded to the semiconductor element and the second lead. The die pad portion includes a contact avoidance surface connected to the first lead obverse surface and the first lead side surface. The contact avoidance surface overlaps with the wire as viewed in the thickness direction, and is located on the second side in the thickness direction with respect to the first lead obverse surface.