Semiconductor Die Recesses for Mechanical Debonding in Die Stacking
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Solution Overview
Problem
Existing semiconductor die stacking processes face challenges in efficiently removing poorly stacked dies during manufacturing, as conventional methods lack effective mechanisms for mechanical debonding, leading to difficulties in reworking and ensuring proper alignment and bonding.
Innovation Solution
The introduction of peripheral recesses on semiconductor dies, with depths significantly greater than the bonding structure thickness, allows for the insertion of a pick device to mechanically debond and remove misaligned dies, facilitating the reworking of semiconductor devices during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of repair
If conventional semiconductor die stacking processes are used without peripheral recesses, then the bonding structure remains intact and stable, but poorly stacked dies cannot be efficiently removed during manufacturing
Solution Approach 1:
The peripheral recess segments the bonding structure by creating a localized weak point at the periphery of the semiconductor die. This segmentation allows the bonding structure to remain intact in the bulk while enabling controlled separation at the recess location, facilitating removal of poorly stacked dies without compromising overall bonding integrity.
Solution Approach 2:
The recess creates a local quality change in the bonding structure by introducing a region with reduced bonding strength at the periphery. This local modification allows differential bonding characteristics - strong bonding in the central region for stable stacking, and weak bonding at the peripheral recess for easy removal of misaligned dies.
2Ease of repair
If peripheral recesses are introduced to enable mechanical debonding, then poorly stacked dies can be removed, but the bonding structure thickness must be significantly less than the recess depth
Solution Approach 1:
The recess is formed in advance during die preparation, creating a pre-defined depth reference that guides the bonding process. This preliminary action ensures that the bonding structure thickness naturally remains less than the recess depth, as the bonding material fills only the available space, eliminating the need for precise thickness control during bonding.
Solution Approach 2:
The recess acts as an intermediary feature that mediates between the bonding structure and the removal mechanism. By providing a depth greater than the bonding structure thickness, the recess serves as a receptacle for pick device tips, enabling mechanical debonding without requiring precise control of bonding thickness.
3Ease of operation
If the recess depth is made at least ten times greater than the bonding structure thickness, then pick device tips can be effectively inserted for debonding, but the substrate requires additional material removal
Solution Approach 1:
The recess depth parameter is specifically designed to be at least ten times greater than the bonding structure thickness. This parameter change creates sufficient clearance for pick device tips to engage and lever effectively, transforming the mechanical debonding process from difficult to easy while maintaining manufacturability through standard etching or milling processes.
Data Source
AI summary
Semiconductor dies and devices, such as memory dies and devices, and associated systems and methods, are disclosed herein. A representative semiconductor die comprises a substrate including a first surface, a second surface opposite the first surface, a perimeter, and a recess formed into the first surface adjacent to the perimeter. The recess has a depth in a direction extending between the first surface and the second surface. The semiconductor die further comprises a first bonding structure on the first surface and a second bonding structure on the second surface. The first bonding structure has a thickness, and the depth is at least ten times greater than the thickness. The recess can facilitate mechanical debonding of the semiconductor die during a manufacturing process that includes stacking the semiconductor die within a semiconductor device package.


