Die Seal Ring Noise Blocking via Segmented Wells
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Solution Overview
Problem
In System-on-Chip (SoC) technology, noise from I/O pads easily passes around the die seal ring and affects device operation, necessitating a solution to address noise expansion during the design phase for both cost and time-to-market considerations.
Innovation Solution
A die seal ring is designed with first and second isolation structures, shallow trench isolations, p-wells, n-wells, and doping regions of different conductive types, utilizing energy differences and Schottky contacts to block noise, with deep wells and contact plugs for effective noise inhibition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a simple die seal ring structure is used, then manufacturing cost is reduced and fabrication is simplified, but noise from I/O pads passes around the die seal ring and affects device operation
Solution Approach 1:
The die seal ring is segmented into multiple regions with different conductive types (p-type and n-type regions) arranged in an alternating pattern. This segmentation creates multiple potential barriers that noise must overcome, effectively blocking noise expansion while maintaining a relatively simple overall structure that can be integrated into the existing die seal ring fabrication process.
Solution Approach 2:
Different regions of the die seal ring are assigned different conductive types (p-type and n-type) to create localized electrical properties. This local quality variation creates energy barriers at the interfaces between regions, which block noise transmission from I/O pads to the die region, while the rest of the structure remains simple and manufacturable.
2Object-affected harmful factors
If multiple isolation structures and doping regions are added to block noise, then noise blocking performance is improved, but device complexity increases
Solution Approach 1:
The noise blocking function is merged with the existing die seal ring structure by integrating p-type and n-type doping regions directly into the die seal ring region. This combines the mechanical protection function of the die seal ring with the electrical noise blocking function, eliminating the need for separate isolation structures and reducing overall device complexity.
Solution Approach 2:
The die seal ring structure is designed to serve multiple functions simultaneously: it provides mechanical protection to the die region, acts as a noise barrier through alternating conductive type regions, and can be fabricated using standard semiconductor processing techniques. This multi-functionality reduces the need for additional components and simplifies the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The die seal ring effectively blocks noise from I/O pads by leveraging energy differences between conductive type wells and doping regions, enhancing the operational performance of SoC devices while simplifying design and reducing costs.
Implementation Method 1
forms wells of different conductive type, such as a p-well and an n-well under shallow trench isolations and in the semiconductor substrate of the die seal ring region. Preferably, energy difference created between these wells of different conductive type could be used to block noise transmitted from the die region.
Implementation Method 2
doping regions of different conductive type and Schottky contacts could be formed on top of the aforementioned wells and between the shallow trench isolations
Data Source
AI summary
A die seal ring disposed outside of a die region of a semiconductor substrate is disclosed. The die seal ring includes a first isolation structure, a second isolation structure, and at least one third isolation structure disposed between the first isolation structure and the second isolation structure; a plurality of first regions between the first isolation structure, the second isolation structure and the third isolation structure; a second region under the first region and the third isolation structure; and a third region under the first isolation structure.