Semiconductor Die Sidewall Recesses for Clean Plasma Singulation
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Solution Overview
Problem
Plasma singulation techniques face challenges in removing residual contaminants from semiconductor die sidewalls, particularly due to the accumulation of fluorine and carbon polymers, which can reduce the quality and reliability of singulated die and limit the usable substrate area.
Innovation Solution
A contaminant-free plasma singulation process is implemented using two processing cycles with different parameters to form shallow and narrow sidewall recesses near the device-side surface and deeper recesses farther from it, allowing effective removal of contaminants without damaging the die and maximizing usable substrate area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma singulation is used to singulate semiconductor die, then throughput and flexibility are improved, but residual contaminants accumulate on sidewalls reducing quality and reliability
Solution Approach 1:
The patent divides the sidewall treatment into two distinct segments: shallow recesses formed by first plasma parameters and deeper recesses formed by second plasma parameters. This segmentation allows different plasma conditions to target different depths, effectively removing contaminants at various levels without compromising die quality or throughput
Solution Approach 2:
The patent changes plasma process parameters between two processing cycles: using first plasma parameters to form shallow recesses and remove surface contaminants, then switching to second plasma parameters to form deeper recesses and remove embedded contaminants. This parameter switching enables comprehensive contaminant removal while maintaining process efficiency
2Reliability
If deeper sidewall recesses are formed to remove contaminants, then contaminant removal is improved, but usable substrate area is reduced
Solution Approach 1:
The patent applies local quality by creating recesses with specific depth characteristics at different locations: shallow recesses near the device-side surface and deeper recesses farther from it. This localized approach ensures contaminants are removed where they accumulate most while preserving maximum usable substrate area
3Reliability
If multiple processing cycles are used to form different sidewall recesses, then contaminant removal effectiveness is improved, but process complexity increases
Solution Approach 1:
The patent employs periodic action through two distinct processing cycles that alternate between different plasma parameters. The first cycle forms shallow recesses and the second cycle forms deeper recesses, creating a periodic pattern of contaminant removal that is both effective and systematically manageable
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes residual contaminants, increases the stability of the semiconductor die, and optimizes the substrate area for forming semiconductor devices by minimizing the accumulation of contaminants and preserving the integrity of the substrate.
Implementation Method 1
In plasma singulation, die singulation occurs using an etching process. The etching process can be performed using a chemistry that selectively etches silicon at a much higher rate than that of dielectrics and/or metals.
Data Source
AI summary
Described implementations include a contaminant-free plasma singulation process, in which residues of materials used during plasma singulation are fully removed from sidewalls of a resulting semiconductor die, without damaging the semiconductor die. From such a contaminant-free plasma singulation process, a semiconductor die may be manufactured. The semiconductor die may include a first plurality of sidewall recesses formed in a sidewall of a substrate of the semiconductor die between a first surface and a second surface of the substrate, each having at most a first depth, as well as a second plurality of sidewall recesses formed in the sidewall of the substrate and disposed between the first plurality of sidewall recesses and the second surface, each having at least a second depth that is greater than the first depth.