Semiconductor Die Sodium Stopper for Leakage Current Suppression
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Solution Overview
Problem
Sodium diffusion in semiconductor dies can create parasitic n-channel devices, leading to increased leakage currents during high temperature reverse bias and high humidity high temperature reverse bias tests, which are critical for p-channel devices despite the p-channel being non-critical itself.
Innovation Solution
A sodium stopper groove filled with a diffusion barrier material is integrated into the insulation layer around the active region of the semiconductor die, preventing sodium diffusion and thereby protecting the p-channel device from parasitic n-channel formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a p-channel device is used in the active region, then the device can operate with standard doping configurations, but sodium diffusion can create parasitic n-channel devices leading to increased leakage currents
Solution Approach 1:
A sodium stopper structure is introduced as an intermediary element between the insulation layer and the active region. This stopper comprises a groove filled with a diffusion barrier material that physically blocks sodium ions from reaching the active region, thereby preventing parasitic device formation without affecting the normal operation of the p-channel device
Solution Approach 2:
The harmful sodium contamination is extracted or removed from the diffusion path by introducing a dedicated barrier structure. The sodium stopper groove and its filled barrier material effectively extract sodium ions from the potential diffusion pathway before they can reach the active region and create parasitic channels
2Reliability
If insulation layer is used to isolate metallization from semiconductor body, then electrical isolation is achieved, but sodium can diffuse through the insulation layer towards the active region
Solution Approach 1:
The insulation system is transformed into a composite structure by combining the original insulation layer with a sodium stopper groove filled with diffusion barrier material. This composite structure maintains the electrical isolation function of the insulation layer while adding the sodium blocking capability of the diffusion barrier material, thereby addressing both requirements simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sodium stopper effectively reduces the formation of parasitic devices, minimizing leakage currents and enhancing the reliability of p-channel devices under stress test conditions.
Implementation Method 1
the diffusion barrier material prevents a sodium diffusion in the insulation layer, e. g. from a lateral edge of the die towards the active region
Data Source
AI summary
The disclosure relates to a semiconductor die and a method for manufacturing the semiconductor die. The semiconductor includes: a semiconductor body having an active region with a p-channel device formed in the active region; an insulation layer formed on the semiconductor body; and a sodium stopper formed in the insulation layer and arranged laterally between the active region and a lateral edge of the semiconductor die. The sodium stopper has an insulation layer groove which intersects the insulation layer vertically and extends around the active region. The insulation layer groove is filled with a diffusion barrier material.