3D Die Stack Packaging With Vertical Heat Dissipation and Low Warpage
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Solution Overview
Problem
The integration of high-performance semiconductor devices with efficient heat dissipation and reduced warpage is challenging due to the complexity of packaging and thermal management in high-density semiconductor devices.
Innovation Solution
A semiconductor device with a high-performance carrier bonded to a die stack, allowing vertical heat dissipation and incorporating a redistribution circuit structure for electrical connectivity, along with a supporting structure for thermal management and mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-density integration is achieved by shrinking device sizes, then integration density is improved, but thermal management complexity and warpage increase
Solution Approach 1:
The patent transitions from planar 2D integration to three-dimensional 3D stacked integration, arranging semiconductor dies vertically in multiple layers. This dimensional change enables higher integration density within the same footprint while providing new thermal management pathways through the vertical dimension, with heat dissipation structures positioned at different elevation levels to extract heat from multiple die layers simultaneously.
Solution Approach 2:
The semiconductor device is divided into multiple independent semiconductor dies, each functioning as a separate functional unit. These dies are stacked vertically with intermediate structures providing both mechanical support and thermal management. The segmentation allows independent optimization of each die's thermal characteristics and enables distributed heat dissipation across multiple surfaces and interfaces.
2Productivity
If high-density integration is achieved by shrinking device sizes, then integration density is improved, but heat dissipation efficiency deteriorates
Solution Approach 1:
The patent introduces vertical heat dissipation pathways by stacking dies in the Z-dimension and positioning heat dissipation structures at multiple elevation levels. Heat can escape vertically through intermediate structures and top surfaces, adding a third dimension to thermal management beyond the traditional planar X-Y surfaces, thereby improving overall heat dissipation efficiency despite higher integration density.
Solution Approach 2:
Intermediate structures are introduced between stacked semiconductor dies to serve dual functions: providing mechanical support and facilitating thermal management. These intermediates act as heat transfer mediators, conducting heat away from individual dies through thermal vias and heat spreaders, and providing additional surface area for heat dissipation to the surrounding environment.
3Productivity
If high-density integration is achieved by shrinking device sizes, then integration density is improved, but warpage increases
Solution Approach 1:
The device is segmented into multiple thin semiconductor dies stacked vertically, with each die being mechanically supported by intermediate structures. This segmentation reduces the overall footprint and distributes mechanical stresses across multiple interfaces, preventing the cumulative warpage that would occur in a single large planar structure. The intermediate structures act as stress distribution elements between layers.
Solution Approach 2:
The patent changes the structural parameters by transitioning from a single-layer planar configuration to a multi-layer vertical stack with controlled thickness ratios and material compositions. By adjusting the thickness of individual dies, intermediate structures, and overall stack configuration, the thermal expansion and mechanical stress parameters are optimized to minimize warpage while maintaining high integration density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances heat dissipation efficiency and reduces warpage, improving the performance and reliability of semiconductor devices by effectively managing thermal and mechanical stresses.
Implementation Method 1
the heat generated by the plurality of semiconductor dies inside the die stack can be vertically drafted toward the high performance carrier and dissipated to an external environment
Implementation Method 2
reduces warpage, improving the performance and reliability of semiconductor devices by effectively managing thermal and mechanical stresses
Data Source
AI summary
A semiconductor device includes a supporting structure, a die stack, and a redistribution circuit structure. The die stack is disposed over the supporting structure and includes a first semiconductor die comprising a substrate and a second semiconductor die, where the first semiconductor die is between the second semiconductor die and the supporting structure, and a material of the supporting structure is different from a material of the substrate of the first semiconductor die. The redistribution circuit structure is disposed over the die stack and electrically coupled to the first semiconductor die and the second semiconductor die.