Die Stack Matching Layer for Reduced NAND Die Warpage

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Solution Overview

Problem

The physical stacking of NAND dies in memory modules leads to manufacturing and production issues such as die warpage, causing non-stick problems during wire bonding and reducing manufacturing yield, due to mismatched coefficients of thermal expansion between different layers.

Innovation Solution

Incorporating a matching layer with a coefficient of thermal expansion that matches one or more of the existing layers within the die, significantly reducing warpage and ensuring successful wire bonding by balancing thermal stresses.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If NAND dies are physically stacked to increase storage capacity, then storage density is improved, but die warpage occurs due to mismatched coefficients of thermal expansion between layers

Engineering Contradiction:
Improvestorage capacityVSAvoiddie warpage
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

A matching layer is introduced between the polymer layer and semiconductor layer to act as a thermal expansion intermediary. This matching layer has a coefficient of thermal expansion that matches the polymer layer, creating a gradual transition and reducing the thermal stress mismatch that causes die warpage during the stacking process

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The coefficient of thermal expansion parameter is modified by introducing the matching layer with specific thermal properties. By selecting a material whose thermal expansion coefficient matches the polymer layer, the overall thermal stress distribution in the stacked structure is optimized, preventing warpage while maintaining high storage capacity

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If multiple layers with different coefficients of thermal expansion are stacked, then storage density is improved, but wire bonding reliability deteriorates due to non-stick problems

Engineering Contradiction:
Improvestorage densityVSAvoidwire bonding reliability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The matching layer serves as a thermal stress intermediary that protects the wire bonding process. By matching the thermal expansion coefficient of the polymer layer, it prevents excessive stress transmission to the wire bonds during thermal cycling, ensuring reliable wire bonding attachment even in high-density stacked configurations

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The matching layer provides beforehand cushioning against thermal stress by absorbing and distributing expansion forces before they reach critical components like wire bonds. This preventive cushioning effect ensures wire bonding reliability is maintained during subsequent manufacturing and operation

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces die warpage by up to 50%, enhancing manufacturing yield, and allows for higher stacking density and increased storage capacity, improving the speed and reliability of memory modules.

Implementation Method 1

mismatched coefficients of thermal expansion between different layers

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS11848281B2Die stack with reduced warpage
Publication Date: 2023.12.19 SK HYNIX NAND PRODUCT SOLUTIONS CORP
  • US11848281B2 patent drawing
  • US11848281B2 patent drawing
  • US11848281B2 patent drawing

AI summary

A microelectronic device can include a polymer, a semiconductor, and a matching layer. The polymer can include a first coefficient of thermal expansion. The semiconductor can be coupled to the polymer layer. The matching layer can be adjacent the semiconductor, and the matching layer can include a second coefficient of thermal expansion that is about the same as the first coefficient of thermal expansion.