Hybrid-Bonded Die Stack Structure for Thinner Logic-Memory Packaging

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Solution Overview

Problem

Integration of multiple semiconductor devices into a compact form remains a challenge in the field of semiconductor manufacturing, particularly in achieving efficient packaging and interconnection of logic dies, control dies, memory cubes, and dummy dies.

Innovation Solution

The proposed solution involves a die stack structure that includes an interconnection structure, logic die, control die, insulating encapsulants, dummy die, and memory cube, where each component is electrically connected through hybrid bonding and encapsulated with insulating materials to form a compact and integrated circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If multiple semiconductor devices are integrated into a compact form, then packaging efficiency and interconnection capabilities are enhanced, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvepackaging efficiencyVSAvoiddevice complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent implements a three-dimensional stacked architecture where memory cubes are vertically stacked above logic dies, which themselves are stacked above control dies. Each layer is encapsulated within insulating encapsulants, creating a nested configuration similar to matryoshka dolls. This nesting approach maximizes vertical space utilization and achieves compact integration while maintaining functional separation between different device types.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The invention transitions from traditional two-dimensional planar packaging to three-dimensional vertical stacking. Multiple semiconductor devices are arranged in the vertical dimension (Z-axis) rather than spreading out horizontally, enabling compact integration by exploiting the third dimension for spatial organization of logic dies, control dies, and memory cubes.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If multiple semiconductor devices are integrated into a compact form, then packaging efficiency is enhanced, but the overall manufacturing process becomes more difficult

Engineering Contradiction:
Improvepackaging efficiencyVSAvoidmanufacturing difficulty
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent divides the integrated circuit into distinct functional segments: control dies at the bottom layer, logic dies in the middle layer, and memory cubes at the top layer. Each segment is independently fabricated and then stacked through hybrid bonding. This segmentation allows each component to be manufactured separately using optimized processes, reducing overall manufacturing complexity despite the three-dimensional integration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Insulating encapsulants serve as intermediary materials between different semiconductor layers. These encapsulants provide electrical isolation, mechanical support, and stress relief during the stacking process. The encapsulants facilitate the hybrid bonding process by preparing the bonding surfaces and maintaining alignment, thereby simplifying the manufacturing of the multi-layer structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If hybrid bonding is used to electrically connect components, then interconnection capabilities are enhanced, but manufacturing precision requirements increase

Engineering Contradiction:
Improveinterconnection capabilitiesVSAvoidbonding precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent employs preliminary surface preparation steps including planarization and patterning of bonding pads before the hybrid bonding process. The bonding surfaces are pre-treated with specific coatings and structures to ensure proper alignment and bonding quality. This preliminary action reduces the precision burden during the actual bonding step by pre-establishing the bonding interface geometry.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The invention utilizes controlled parameter changes during hybrid bonding, including temperature, pressure, and time profiles. By carefully adjusting these parameters, the bonding process achieves reliable electrical and mechanical connections while accommodating variations in manufacturing tolerances. The parameter optimization enables robust bonding even with moderate precision variations in alignment.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the efficient integration of multiple semiconductor devices into a compact form, enhancing packaging efficiency and interconnection capabilities while reducing the overall thickness of the die stack structure.

Implementation Method 1

The logic die and the control die are electrically connected to the interconnection structure by a hybrid bonding process

Methodology Applied
Scientific EffectHybrid bonding: Diffusion Welding

Data Source

PatentUS12266637B2Die stack structure and manufacturing method thereof
Publication Date: 2025.04.01 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12266637B2 patent drawing
  • US12266637B2 patent drawing
  • US12266637B2 patent drawing

AI summary

A die stack structure includes an interconnection structure, a logic die, a control die, a first insulating encapsulant, a dummy die, a memory cube and a second insulating encapsulant. The logic die is electrically connected to the interconnection structure. The logic die comprises a first dielectric bonding structure. The control die is laterally separated from the logic die and electrically connected to the interconnection structure. The first insulating encapsulant laterally encapsulates the logic die and the control die. The dummy die is stacked on the logic die, the logic die is located between the interconnection structure and the dummy die, the dummy die comprises a second dielectric bonding structure, and a bonding interface is located between the first dielectric bonding structure and the second dielectric bonding structure. The memory cube is stacked on and electrically connected to the control die, wherein the control die is located between the interconnection structure and the memory cube. The second insulating encapsulant laterally encapsulates the dummy die and the memory cube.