3D Die-Stacked Microelectronic Assembly for Fine-Pitch Interconnects

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Solution Overview

Problem

Conventional interconnect pitches in IC package substrates are constrained by manufacturing, materials, and thermal considerations, limiting the ability to efficiently communicate large numbers of signals between IC dies and deliver power effectively.

Innovation Solution

A microelectronic assembly with a package substrate and multi-layer die subassembly featuring direct die-to-package substrate, die-to-die, and multi-level interconnects, utilizing conductive materials like copper, silver, nickel, and gold, with varying pitches to enhance signal communication and power delivery.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional substrates are used for IC die coupling, then manufacturing and material constraints are maintained, but interconnect pitch is limited and signal communication efficiency is reduced

Engineering Contradiction:
Improveinterconnect pitchVSAvoidmanufacturing constraints
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent implements multi-level interconnect structures that extend connections through multiple vertical layers and horizontal planes. Conductive vias traverse through dielectric layers to establish three-dimensional connectivity between IC dies and package substrate, transforming conventional two-dimensional interconnect layouts into three-dimensional architectures that achieve finer effective pitch without increasing lateral manufacturing complexity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent embeds conductive vias within dielectric layers, creating nested structures where conductive elements are contained within insulating matrices. Multiple dielectric layers with embedded vias are stacked and interconnected, forming nested hierarchical structures that enable dense interconnect routing while maintaining manufacturability through standardized layering processes

Inventive Principle:
Principle #7Nested doll (Nesting)

2Power

If conventional interconnect structures are used, then thermal considerations are simplified, but power delivery effectiveness is reduced

Engineering Contradiction:
Improvepower delivery effectivenessVSAvoidthermal management complexity
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The patent divides power delivery functions across multiple separate conductive vias and interconnect paths distributed through different dielectric layers. Rather than relying on single thick power traces, power is segmented into numerous parallel conductive pathways that collectively deliver higher effective power while distributing thermal load across multiple locations and layers

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent varies the density, size, and material composition of conductive vias based on local power and signal requirements. High-power regions utilize larger diameter vias with higher conductivity materials, while low-power signal regions use smaller vias, optimizing both power delivery effectiveness and thermal management in different local zones of the package

Inventive Principle:
Principle #3Local quality

3Productivity

If fewer interconnect levels are used, then manufacturing complexity is reduced, but signal communication bandwidth is limited

Engineering Contradiction:
Improvesignal communication bandwidthVSAvoidmulti-level interconnect structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent utilizes multiple vertical layers of dielectric and conductive materials to create three-dimensional interconnect pathways. Signals can travel through multiple stacked layers via vertical vias and horizontal trace segments, effectively multiplying the available communication channels without increasing the lateral footprint, thereby achieving higher bandwidth through vertical dimension exploitation

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The multi-level interconnect structure serves multiple functions simultaneously: signal transmission, power delivery, and thermal management. The same conductive vias and dielectric layers that enable high-bandwidth signal communication also provide power distribution pathways and thermal conduction routes, reducing the need for separate dedicated structures for each function

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution achieves reliable attachment of multiple IC dies at a lower cost, with improved power efficiency, higher bandwidth, and reduced package size, suitable for small and low-profile applications in computers, tablets, industrial robots, and consumer electronics.

Implementation Method 1

utilizing conductive materials like copper, silver, nickel, and gold, with varying pitches to enhance signal communication and power delivery

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20250336887A1Microelectronic assemblies
Publication Date: 2025.10.30 INTEL CORP
  • US20250336887A1 patent drawing
  • US20250336887A1 patent drawing
  • US20250336887A1 patent drawing

AI summary

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a first die having a first surface and an opposing second surface embedded in a first dielectric layer, where the first surface of the first die is coupled to the second surface of the package substrate by first interconnects; a second die having a first surface and an opposing second surface embedded in a second dielectric layer, where the first surface of the second die is coupled to the second surface of the first die by second interconnects; and a third die having a first surface and an opposing second surface embedded in a third dielectric layer, where the first surface of the third die is coupled to the second surface of the second die by third interconnects.