3D Package Die Stitching Across Seal Rings for Signal Isolation
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Solution Overview
Problem
Current semiconductor packaging technologies face limitations in integrating multiple integrated circuit dies due to signal interference and manufacturing complexity caused by seal rings, which isolate device regions but complicate electrical connections between them.
Innovation Solution
The solution involves directly bonding integrated circuit dies to a bottom wafer with an active interposer, utilizing a multi-layer interconnect structure with seal rings and stitching conductors to isolate signals while allowing for electrical connections between device regions, thereby enhancing manufacturing flexibility and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If seal rings are used to isolate device regions, then signal interference is reduced, but electrical connections between device regions become more complex
Solution Approach 1:
The interconnect structure is divided into multiple layers with seal rings at specific levels. The seal rings segment the conductive paths vertically, isolating signals between device regions at certain depths while allowing horizontal connections to pass through at other levels. This segmentation approach reduces signal interference by creating electromagnetic shielding barriers without completely blocking electrical connections.
Solution Approach 2:
The patent utilizes a three-dimensional multi-layer interconnect architecture where seal rings are positioned at different vertical levels. Electrical connections between device regions are routed through multiple layers, passing above or below seal rings in the vertical dimension. This dimensional approach allows signals to be isolated at specific depths while maintaining connectivity through alternative vertical paths.
2Quantity of substance
If multiple integrated circuit dies are integrated into a given area, then integration density is improved, but manufacturing complexity increases
Solution Approach 1:
The multi-layer interconnect structure with seal rings serves multiple functions simultaneously: it provides signal isolation between device regions, enables electrical connections between regions, supports high integration density, and facilitates standardized manufacturing processes. This universal structure can be applied across different package configurations and device types, reducing overall manufacturing complexity despite high integration requirements.
Solution Approach 2:
The patent implements a nested hierarchical structure where multiple device regions are integrated within a single package substrate. Each device region contains its own interconnect layers, seal rings, and routing structures that are nested within the overall package architecture. This nesting allows multiple functional units to coexist in a compact arrangement while maintaining independent manufacturability and assembly processes.
3Productivity
If direct bonding of integrated circuit chips is performed, then manufacturing efficiency is improved, but signal isolation between chips becomes difficult
Solution Approach 1:
The patent introduces an intermediate interposer substrate that bonds multiple integrated circuit chips together. This interposer contains the multi-layer interconnect structure with seal rings that mediates between the chips, providing both electrical connectivity and signal isolation. The intermediary structure enables direct bonding of multiple chips to a single substrate while maintaining signal integrity through the sealed interconnect layers.
Data Source
AI summary
A package device for 3D stacking of integrated circuits includes a semiconductor substrate, and an interconnect structure on the semiconductor substrate. The interconnect structure is organized into a plurality of device regions, and the device has a first seal ring extending vertically through the interconnect structure in a first device region, and a second seal ring extending vertically through the interconnect structure in a second device region. The interconnect structure also includes a conductive line electrically connecting a metallization pattern within the first seal ring to a second metallization pattern within the second seal ring, wherein the first horizontally extending conductive line extends through the first seal ring and the second seal ring.