Semiconductor Die Street Cleaning Using Sonic Particle Removal
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Solution Overview
Problem
Existing methods for singulating semiconductor die from substrates often result in residual particulates in the die street, which can cause contamination and structural issues during assembly.
Innovation Solution
The method involves forming a damage layer beneath the die street in the semiconductor substrate, singulating the substrate along the die street using techniques such as sawing or stealth dicing, and then applying sonic energy to remove particulates from the die street.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If sawing or stealth dicing is used to singulate the semiconductor substrate, then the semiconductor die can be separated from the substrate, but residual particulates remain in the die street causing contamination
Solution Approach 1:
A damage layer is formed in the die street region before the singulation process using laser irradiation. This preliminary action weakens the material structure in advance, making it easier to remove particulates afterward through sonic energy application, thereby reducing contamination while maintaining productive singulation
Solution Approach 2:
Sonic energy is applied to the singulated semiconductor die to generate mechanical vibrations that dislodge and remove residual particulates from the die street. This vibration-based cleaning method effectively reduces contamination without affecting the already-completed singulation process
2Object-affected harmful factors
If a damage layer is formed beneath the die street using laser irradiation, then particulate removal is facilitated, but the process complexity increases
Solution Approach 1:
The laser system serves multiple functions: it forms the damage layer in the die street and also assists in the singulation process by weakening the material. This multi-functionality reduces overall process complexity despite adding the damage layer formation step, as it consolidates multiple operations into a single tool
Solution Approach 2:
The damage layer acts as an intermediary structure that facilitates particulate removal. By creating this intermediate damaged region, the system enables easier removal of particulates through sonic energy without requiring direct mechanical contact or complex chemical processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the presence of particulates in the die street, enhancing the cleanliness and integrity of the semiconductor die, which in turn improves the reliability and performance of semiconductor devices.
Implementation Method 1
irradiating the die street with a laser beam at a focal point within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street to form the damage layer
Implementation Method 2
removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die
Data Source
AI summary
Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.