Semiconductor Die Stress Features for Precise Bonding Alignment
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Solution Overview
Problem
In the manufacturing of integrated circuits, the alignment and placement of semiconductor dies with multiple fabrication layers and varying critical dimensions is challenging due to stress-induced pattern distortions and errors, necessitating improved accuracy and throughput in die bonding processes, especially in heterogeneous integration.
Innovation Solution
A method involving the generation and application of stress features on semiconductor dies to adjust the locations of fabricated features, using a targeted emission system and processor system to induce stress patterns that correct distortions and improve alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If die bonding is performed without stress correction, then manufacturing throughput is maintained, but alignment accuracy and placement precision deteriorate due to stress-induced pattern distortions
Solution Approach 1:
The patent applies stress features to semiconductor dies before the bonding process to pre-correct pattern distortions. By performing stress application as a preliminary action prior to bonding, the system compensates for expected stress-induced errors in advance, enabling both high alignment accuracy and maintained throughput without requiring post-bonding corrections that would reduce productivity
Solution Approach 2:
The system dynamically adjusts stress feature parameters (such as stress magnitude, distribution pattern, and application timing) based on measured distortion characteristics of specific dies. This parameter optimization allows precise control over the correction process, achieving the necessary alignment accuracy while minimizing the time and resources required, thus maintaining manufacturing throughput
2Manufacturing precision
If stress features are applied to correct pattern distortions, then manufacturing precision improves, but process complexity and device complexity increase
Solution Approach 1:
The patent replaces complex mechanical alignment adjustment systems with a stress-based correction approach. Instead of using intricate mechanical stages and adjustment mechanisms to physically reposition dies for alignment, the system applies controlled stress features that induce dimensional changes in the die patterns themselves, achieving precise placement through material response rather than mechanical manipulation
Solution Approach 2:
The stress features act as an intermediary between the bonding process and the pattern alignment. Rather than directly adjusting die positions or pattern geometries through complex interactions, the system introduces stress features as a mediating element that indirectly achieves alignment by inducing controlled dimensional changes in the die structures during or before bonding
3Measurement precision
If stress features are generated and applied to semiconductor dies, then distortion correction and alignment accuracy improve, but additional processing time and energy consumption increase
Solution Approach 1:
The system applies stress features with local quality, targeting specific regions and individual dies that exhibit measured distortions rather than uniformly treating all dies. By concentrating stress application only where needed based on actual distortion measurements, the system achieves precise correction accuracy while minimizing the total energy consumption associated with stress feature generation and application across the entire wafer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the accuracy and speed of die placement by correcting stress-induced distortions, leading to improved manufacturing efficiency and integration of semiconductor dies.
Implementation Method 1
errors (e.g., differences from a planned layout) may be induced in the die themselves by processing (e.g., imaging errors, patterning errors, etc.), including by die bonding (e.g., stress-induced pattern distortion such as resulting from thermal distortion, chucking variations, etc.)
Implementation Method 2
stress-induced pattern distortion such as resulting from thermal distortion
Data Source
Figure 1A~1C
Figure 1D
Figure 2A~2B
AI summary
A system and method for generating a pattern of stress features, the pattern of stress features configured to alter locations of multiple fabricated features of a manufactured semiconductor die; and applying at least part of the pattern of stress features to the semiconductor die to adjust locations of the multiple fabricated features.