Dielectric Layer Baking to Remove Plasma-Induced Particle Accumulation
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Solution Overview
Problem
The increasing integration of semiconductor devices leads to insufficient wafer area for interconnects, resulting in particle accumulation during plasma processes, which affects the electrical performance and reliability of semiconductor devices.
Innovation Solution
Implementing a baking process after plasma deposition or etching processes to remove accumulated ions and particles, using inert gases like helium or neon at 380-450°C for 1-20 minutes, to reduce surface voltage and improve dielectric properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma process is performed to form dielectric layer, then dielectric layer is formed successfully, but particles accumulate on the dielectric layer affecting electrical performance
Solution Approach 1:
A baking process is performed after plasma deposition to proactively remove particles before they cause electrical performance degradation. This preliminary cleaning action prevents the harmful effect of particle accumulation rather than addressing it after damage occurs.
Solution Approach 2:
The plasma process that deposits dielectric material also generates particle contamination. The invention converts this harmful byproduct into a manageable condition by introducing a controlled baking process that removes particles, effectively transforming the plasma process's harmful effect into an opportunity for enhanced cleaning.
2Adaptability or versatility
If plasma process is interrupted, then process flexibility is improved, but particles accumulate on dielectric layer decreasing yield and reliability
Solution Approach 1:
The baking process is performed as a standard step after plasma deposition, even before knowing if interruption will occur. This preliminary action ensures particles are removed regardless of whether the process is interrupted, maintaining reliability while preserving process flexibility.
Solution Approach 2:
The baking process acts as a cushioning measure against the potential harm of process interruption. By performing baking beforehand, the system prepares a protective measure that mitigates the reliability damage that would otherwise result from interruption-induced particle accumulation.
3Object-affected harmful factors
If baking process is performed after plasma process interruption, then particle removal is achieved, but additional process time is required
Solution Approach 1:
The baking process is merged into the standard manufacturing flow as a routine step following plasma deposition, rather than as a separate corrective action. This integration allows particle removal to occur as part of the normal process sequence, minimizing additional time investment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The baking process enhances the yield and reliability of semiconductor devices by reducing particle accumulation and surface voltage, and can be integrated into standard manufacturing to improve dielectric material properties.
Implementation Method 1
A first baking process is performed. The aforementioned first baking process is performed under a temperature of about 380 ̃450 centigrade.
Implementation Method 2
A plasma vapor deposition process is performed to form a dielectric layer over the substrate. The aforementioned plasma vapor deposition process is selected from a group consisting of a plasma enhanced chemical vapor deposition process and a high density plasma chemical vapor deposition.
Implementation Method 3
A plasma etching process is performed to pattern the dielectric layer to form an opening in the dielectric layer.
Data Source
AI summary
The invention is directed to a method for manufacturing semiconductor device. The method comprises steps of providing a substrate and then forming a dielectric material-containing device over the substrate. A plasma vapor deposition process is performed to form a dielectric layer over the substrate. A first baking process is performed.