Dielectric Film Baking Under Reduced Pressure to Prevent Metal Oxidation
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Solution Overview
Problem
Conventional methods for forming dielectric films with metal oxides like BST on metal layers, such as Cu or Ni, result in metal oxidation during baking, leading to inadequate dielectric constant and leak characteristics, despite efforts to prevent oxidation.
Innovation Solution
A dielectric film production process involving a baking step in a reduced pressure atmosphere to prevent metal layer oxidation, with a pre-baking step at 300 to 500°C and a main baking step at 400 to 1200°C, effectively reducing oxygen impact and enhancing dielectric constant and leak characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If baking is performed in a conventional atmosphere (air or reducing gas), then metal layer oxidation can be prevented to some extent, but the dielectric constant remains insufficient and leak characteristics are inadequate
Solution Approach 1:
The patent applies vacuum atmosphere (inert environment) during baking to prevent metal layer oxidation. By removing oxygen from the baking environment, the metal layer remains conductive while the dielectric film achieves high dielectric constant and excellent leak characteristics without requiring buffer layers or reducing gases.
2Reliability
If a buffer layer is provided on the metal layer to prevent oxidation, then metal oxidation is prevented, but the process complexity and production cost increase
Solution Approach 1:
The patent extracts the harmful element (oxygen) from the baking environment by performing baking under vacuum conditions. This eliminates the need for buffer layers to protect the metal layer, simplifying the overall process structure while maintaining metal layer integrity and achieving superior dielectric film properties.
Solution Approach 2:
By using vacuum atmosphere instead of air, the patent creates an inert environment that naturally protects the metal layer from oxidation without requiring additional buffer layers, thereby reducing process complexity.
3Reliability
If reducing atmosphere (H2O/H2 mixed gas) is used for baking, then metal oxidation is prevented, but the dielectric film quality remains insufficient
Solution Approach 1:
The patent uses vacuum atmosphere instead of reducing gas atmosphere. This inert environment effectively prevents metal oxidation while simultaneously enabling the formation of dielectric films with high dielectric constant and excellent leak characteristics, overcoming the limitations of reducing atmosphere methods.
4Ease of manufacture
If conventional baking methods are used, then production process is simple, but metal layer oxidation occurs leading to poor capacitor performance
Solution Approach 1:
The patent introduces vacuum atmosphere baking, which maintains relative process simplicity while dramatically improving capacitor performance. The vacuum environment prevents metal oxidation and enables formation of high-quality dielectric films, achieving both ease of manufacture and high reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process yields dielectric films with high dielectric constant and excellent leak characteristics while preventing metal layer oxidation, simplifying production and reducing costs by eliminating the need for buffer layers and specialized reducing atmospheres.
Implementation Method 1
during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere
Implementation Method 2
heating in the reduced pressure atmosphere notably reduces the frequency of oxygen impacting on the metal layer during baking, thereby preventing oxidation of the metal layer
Implementation Method 3
a baking step in which a dielectric film is formed by heating of a precursor layer formed on a metal layer
Implementation Method 4
the dielectric constant of the obtained dielectric film is instead increased, while the leak characteristic is also improved
Data Source
AI summary
A dielectric film production process comprising a baking step in which a dielectric film is formed by heating a precursor layer formed on a metal layer, wherein the metal layer contains at least one type of metal selected from the group consisting of Cu, Ni, Al, stainless steel and austenitic nickel-chromium-based superalloy and during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere.