Dielectric Bonding Patterns for 3DIC Fusion Bond Alignment
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Solution Overview
Problem
Three-dimensional integrated circuits (3DICs) face challenges related to bonding defects and yield loss due to the Joule-Thomson effect during fusion bonding, which affects the integration density and reliability of semiconductor devices.
Innovation Solution
Incorporating a dielectric bonding layer with dielectric bonding patterns of varying density and composition to facilitate alignment and bonding between package components, minimizing the Joule-Thomson effect and enhancing bonding strength through a pre-bonding and annealing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If fusion bonding is used to bond package components in 3DICs, then integration density and speed are improved, but bonding defects occur due to the Joule-Thomson effect
Solution Approach 1:
A dielectric bonding layer is introduced as an intermediary between the first and second package components. This bonding layer includes dielectric bonding patterns that facilitate alignment and bonding while minimizing the Joule-Thomson effect, thereby reducing bonding defects and improving yield without sacrificing integration density
Solution Approach 2:
The dielectric bonding layer incorporates patterns with varying density and composition to optimize bonding performance. By adjusting the density of dielectric bonding patterns and modifying the composition of the dielectric material, the bonding process minimizes thermal stress and Joule-Thomson effects while maintaining strong adhesion between stacked chips
2Productivity
If smaller feature sizes are used to increase integration density, then more components can be integrated, but bonding precision and alignment become more difficult
Solution Approach 1:
The bonding interface is segmented into discrete dielectric bonding patterns rather than a continuous layer. These patterns are strategically positioned to provide alignment references and facilitate precise bonding between package components, improving manufacturing precision while maintaining high integration density
Solution Approach 2:
The dielectric bonding layer with its patterned structure serves as an intermediary that enhances alignment precision. The patterns provide visual and physical references for alignment during the bonding process, enabling accurate positioning of smaller features and improving overall manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces non-bonding defects, improves yield, and enhances the robustness of the bonding structure, leading to improved integration density and reliability of semiconductor devices.
Implementation Method 1
bonding defects and yield loss due to the Joule-Thomson effect during fusion bonding
Implementation Method 2
enhancing bonding strength through a pre-bonding and annealing process
Data Source
AI summary
A semiconductor device includes a first die. The first die includes a first dielectric bonding layer thereon and a plurality of first dielectric bonding patterns in the first dielectric bonding layer. A composition of the first dielectric bonding patterns is different from a composition of the first dielectric bonding layer.