Dielectric Bonding for Semiconductor Wafer Carrier Attachment
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Solution Overview
Problem
Temporary adhesive layers used to attach semiconductor wafers to carriers have limited temperature stability, restricting processing temperatures and resulting in limitations in quality, yield, and productivity due to adjusted processes that must stay within their temperature limits.
Innovation Solution
A dielectric material with higher temperature stability is applied to bond the semiconductor wafer to a carrier, allowing for higher temperature processes and enabling the removal of the carrier while leaving the dielectric material on the semiconductor device, which can withstand temperatures exceeding those of typical temporary adhesives.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a temporary adhesive layer is used to attach the semiconductor wafer to the carrier, then the wafer can be supported during processing, but the adhesive layer has limited temperature stability (processing limit of two hours at 250° C.) which restricts subsequent processing temperatures
Solution Approach 1:
The patent changes the material parameters of the bonding layer by using a dielectric material instead of a temporary adhesive layer. This dielectric material has higher temperature stability and can withstand processing temperatures exceeding 250° C. for durations longer than two hours, thereby removing the temperature constraints that limited processing flexibility while maintaining reliable wafer attachment during fabrication
2Reliability
If processes are adjusted to stay within the temperature limits of the adhesive layer, then the adhesive layer remains intact, but quality, yield, and performance are substantially limited
Solution Approach 1:
The patent changes the thermal parameter of the bonding material to withstand higher temperatures. By using a dielectric material with superior temperature stability instead of a temperature-sensitive adhesive layer, the system allows subsequent high-temperature processing steps that improve device quality and manufacturing precision without compromising bonding integrity
3Ease of manufacture
If the carrier is removed after processing, then the temporary adhesive layer must be eliminated, but this creates additional process steps and potential damage risks
Solution Approach 1:
The patent applies the principle of discarding the carrier after its function is fulfilled. The dielectric material remains on the semiconductor device after carrier removal, eliminating the need for additional adhesive layer elimination steps. The carrier is discarded while the beneficial dielectric layer is retained, simplifying the overall manufacturing process
Solution Approach 2:
The carrier is treated as a disposable component that serves its purpose during processing and is then removed. The dielectric material, however, transitions from being part of the temporary bonding system to becoming a permanent functional component of the semiconductor device, eliminating waste and reducing process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for more extensive processing without adhesive limitations, enhancing the quality, yield, and productivity of semiconductor devices by maintaining the dielectric material on the wafer post-processing.
Implementation Method 1
applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material
Data Source
AI summary
A method for manufacturing a semiconductor device includes providing a carrier and a semiconductor wafer having a first side and a second side opposite to the first side. The method includes applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material. The method includes processing the semiconductor wafer and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material.