Dielectric Chiplet Interposer for Low-Stress Large-Area Routing

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Solution Overview

Problem

The semiconductor industry faces challenges in achieving cost-effective and stress-reduced packaging techniques for semiconductor dies, particularly in advanced packaging technologies like Package-on-Package (POP) and Chip-On-Wafer-On-Substrate (CoWoS) structures, where silicon-based substrates are costly and contribute to stress concentration.

Innovation Solution

The use of a dielectric fill layer as a substrate in chiplet interposers, which eliminates the need for a silicon substrate, reduces stress concentration, and incorporates a redistribution structure formed through multiple side-by-side patterning processes, allowing for larger metallization patterns without requiring larger exposure tools.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If silicon-based substrates are used in advanced packaging technologies, then structural support and electrical connectivity are provided, but cost increases and stress concentration occurs

Engineering Contradiction:
Improvestructural supportVSAvoidcost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent replaces expensive silicon-based substrates with cost-effective organic substrate materials that can be discarded after serving their temporary purpose in the packaging process, eliminating the need for costly silicon while maintaining structural support functionality

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The patent changes the material parameters from silicon-based to organic-based substrates, fundamentally altering the cost and stress characteristics while maintaining the necessary structural and electrical functions through modified material composition and design

Inventive Principle:
Principle #35Parameter changes

2Reliability

If silicon-based substrates are used in advanced packaging technologies, then structural support is provided, but stress concentration increases

Engineering Contradiction:
Improvestructural supportVSAvoidstress concentration
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the material parameters from silicon-based to organic-based substrates, fundamentally altering the stress characteristics while maintaining the necessary structural and electrical functions through modified material composition and design

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite organic substrate structures that combine multiple materials with complementary properties to distribute and reduce stress concentration while maintaining structural support, replacing homogeneous silicon substrates with engineered composite systems

Inventive Principle:
Principle #40Composite materials

3Area of stationary object

If larger exposure tools are used to form larger metallization patterns, then larger pattern sizes are achieved, but device complexity and cost increase

Engineering Contradiction:
Improvemetallization pattern sizeVSAvoidexposure tool requirements
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent divides the formation of large metallization patterns into multiple smaller, sequential patterning steps using standard-sized exposure tools, breaking down the complex task of creating large patterns into manageable segments that can be executed with existing equipment

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent extends metallization patterns across multiple layers and dimensions, using vertical stacking and three-dimensional routing to achieve large effective pattern areas without requiring proportionally larger exposure tools, utilizing the third dimension to compensate for lateral size limitations

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250349747A1Chiplet interposer
Publication Date: 2025.11.13 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250349747A1 patent drawing
  • US20250349747A1 patent drawing
  • US20250349747A1 patent drawing

AI summary

Embodiments include packages and methods for forming packages which include interposers having a substrate made of a dielectric material. The interposers may also include a redistribution structure over the substrate which includes metallization patterns which are stitched together in a patterning process which includes multiple lateral overlapping patterning exposures.