Dielectric Coating of Hidden Surfaces With Uniform CVD Thickness
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Solution Overview
Problem
Existing thermal chemical vapor deposition (CVD) methods lack the precision and consistency in producing dielectric materials, leading to variations in coating thickness and composition, which are critical for applications requiring uniformity and reliability.
Innovation Solution
The development of dielectric coatings using static thermal chemical vapor deposition (CVD) with specific precursors, such as silane and oxidizers, applied to hidden and visible surfaces of substrates, achieving thicknesses between 50 nanometers and 2,000 nanometers, and compositions with high silicon content, enhancing properties like inertness, resistance to sulfur adsorption, and corrosion resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If thermal chemical vapor deposition (CVD) is used to produce dielectric materials, then the process is simpler and more cost-effective, but the precision and consistency of coating thickness and composition deteriorate
Solution Approach 1:
The patent segments the CVD process into multiple sequential deposition cycles, where each cycle deposits a thin layer of dielectric material. By controlling the number of cycles and deposition parameters, the process achieves both simplicity (using standard CVD equipment) and precision (controlling thickness at 50-2000 nanometers with uniformity across complex geometries).
Solution Approach 2:
The patent employs parameter changes by adjusting deposition conditions (temperature, pressure, gas flow rates, precursor concentrations) across multiple deposition cycles. This allows the process to maintain simplicity while achieving consistent coating thickness and composition, with bulk resistivity of at least 10^8 Ω·cm and uniform coverage on complex geometries.
2Manufacturing precision
If atomic layer deposition (ALD) is used to produce dielectric materials, then the precision and uniformity of coating thickness improve, but the process complexity and cost increase
Solution Approach 1:
The patent extracts the essential precision-achieving elements from ALD (sequential deposition cycles with controlled parameters) and implements them within a simpler CVD framework. This allows achieving ALD-level thickness uniformity (50-2000 nanometers) and composition consistency without requiring complex ALD equipment or multi-step processes.
3Adaptability or versatility
If dielectric coatings are applied to complex geometries with hidden surfaces, then the versatility and applicability improve, but the difficulty of achieving uniform coating distribution increases
Solution Approach 1:
The patent applies continuous sequential deposition cycles that maintain consistent coating conditions throughout the process. This continuous action ensures uniform dielectric coating distribution across complex geometries including hidden surfaces, with thickness controlled between 50-2000 nanometers and bulk resistivity of at least 10^8 Ω·cm, without requiring line-of-sight deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides dielectric articles with consistent thickness and composition, improving adhesion, reducing delamination, and enhancing resistance to sulfur adsorption and corrosion, suitable for complex geometries and plasma environments.
Implementation Method 1
The development of dielectric coatings using static thermal chemical vapor deposition (CVD) with specific precursors, such as silane and oxidizers, applied to hidden and visible surfaces of substrates
Implementation Method 2
enhancing properties like inertness, resistance to sulfur adsorption, and corrosion resistance
Data Source
AI summary
Dielectric coatings, articles having dielectric coatings, and systems including coating having dielectric coatings are disclosed. The dielectric article includes a substrate having hidden surfaces and a dielectric coating on the hidden surfaces of the substrate. The dielectric coating has a bulk resistivity of at least 103 Ω·cm and a thickness of between 30 nanometers and 3,000 nanometers.