Dielectric Composition for High Q Value Film Capacitors
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Solution Overview
Problem
Existing dielectric materials struggle to achieve high relative permittivity and low dielectric loss (high Q value) in downsized electronic components, particularly at high frequencies, as materials like Ba(Mg1/3Ta2/3)O3 either become too large when used in sintered form or lose their high Q value when formed into films.
Innovation Solution
A dielectric composition comprising a complex oxide represented by the formula xAO-yB'O-zB"2O5, where A is Ba, Ca, or Sr, B' is Mg or Ni, and B" is Nb or Ta, with specific ratios of x, y, and z that meet conditions such as x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤x/3+1/9, to maintain long-range order and achieve high relative permittivity and Q value even in downsized components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Ba(Mg1/3Ta2/3)O3 is used as a condensed sintered body to achieve low dielectric loss and high relative permittivity, then the Q value reaches 51000 and εr reaches 24.7, but the component size becomes too large for high-frequency applications
Solution Approach 1:
The invention changes the chemical composition parameters by introducing a multi-component oxide system (BaO-CaO-SrO-MgO-NiO-Ta2O5-Nb2O5) with specific compositional ranges, transforming the single-phase Ba(Mg1/3Ta2/3)O3 into a complex multi-element dielectric composition that achieves both high Q value and high εr in a compact form
Solution Approach 2:
The invention creates a composite dielectric material by combining multiple oxides (BaO, CaO, SrO, MgO, NiO, Ta2O5, Nb2O5) in specific proportions within defined compositional ranges, forming a new composite system that simultaneously delivers high relative permittivity and low dielectric loss, resolving the size-Q value tradeoff
2Volume of moving object
If Ba(Mg1/3Ta2/3)O3 is formed as a film to downsize the component, then the component size is reduced, but the Q value drops from 51000 to 63.3
Solution Approach 1:
The invention modifies the compositional parameters by incorporating additional oxide components (CaO, SrO, NiO, Nb2O5) alongside the base Ba(Mg1/3Ta2/3)O3 system, with specific concentration ranges that optimize both film-forming characteristics and dielectric performance, maintaining high Q value in downsized film configurations
Solution Approach 2:
The invention develops a composite film material system combining multiple oxides in controlled proportions, where the synergistic interaction between components (particularly the role of Nb2O5 and NiO in the composite) preserves high Q value even in thin-film form, overcoming the Q value degradation observed in conventional Ba(Mg1/3Ta2/3)O3 films
3Reliability
If SiNx amorphous film is used to achieve low dielectric loss, then the Q value is acceptable, but the relative permittivity is only 6.5 requiring large area
Solution Approach 1:
The invention fundamentally changes the dielectric material parameters by transitioning from amorphous SiNx (εr=6.5) to a crystalline/composite oxide system with tailored composition ratios, achieving simultaneous enhancement of both εr and Q value through compositional optimization and phase control
Solution Approach 2:
The invention employs a composite oxide material system (BaO-CaO-SrO-MgO-NiO-Ta2O5-Nb2O5) that combines the advantages of different oxide components, achieving high relative permittivity through the perovskite-phase Ba-based oxides while maintaining low dielectric loss through the synergistic effect of the multi-component composition, thereby reducing capacitor area
Data Source
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AI summary
The present invention provides a dielectric composition containing a complex oxide represented by the formula of xAO-yB'O-zB"2O5 as the main component, wherein A represents at least one element selected from the group consisting of Ba, Ca and Sr, B' represents at least one element selected from the group consisting of Mg, Zn and Ni, B" represents at least one element selected from the group consisting of Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤x/3+1/9. The present invention also provides an electronic component using the dielectric composition of the present invention.