Dielectric Composition Hydrogen Resistance

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Solution Overview

Problem

Dielectric thin films experience reliability issues due to deterioration in insulativity under hydrogen atmospheres, affecting the reliability of electronic circuit boards.

Innovation Solution

A dielectric composition with a composition formula (Sr1-xCax)m(Ti1-yHfy)O3-δNδ is used, where 0.15<x≤0.90, 0<y≤0.15, and 0.90≤m≤1.15, to form a dielectric thin film with improved hydrogen resistance, which is integrated into electronic circuit boards.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional dielectric thin film is used, then the manufacturing cost is low and it can be formed on substrates with low heat resistance, but the insulativity deteriorates under hydrogen atmosphere leading to poor reliability

Engineering Contradiction:

Improveinsulation resistance under hydrogen atmosphereVSAvoidmanufacturing process complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent modifies the chemical composition parameters of the dielectric thin film by incorporating nitrogen at specific concentrations (0.01 ≤ δ ≤ 0.06) and adjusting the stoichiometric ratio (0.90 ≤ m ≤ 1.15), which fundamentally changes the material's resistance to hydrogen-induced deterioration while maintaining manufacturability through established deposition techniques

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite dielectric material system combining Sr1-xCax(Ti1-yHfy)O3-δ with nitrogen incorporation, where the multi-element composition works synergistically to provide both the desired dielectric properties and enhanced hydrogen resistance without requiring completely new manufacturing processes

Inventive Principle:

Principle #40Composite materials

2Reliability

If nitrogen is incorporated into the perovskite structure, then dielectric properties are maintained on low heat resistance substrates, but insulativity still deteriorates under hydrogen atmosphere

Engineering Contradiction:

Improvehydrogen resistanceVSAvoidcomposition control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent establishes specific parameter ranges for nitrogen content (0.01 ≤ δ ≤ 0.06) and stoichiometric ratio (0.90 ≤ m ≤ 1.15) that optimize hydrogen resistance while remaining compatible with existing manufacturing tolerances and deposition processes

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent introduces nitrogen at specific lattice positions within the perovskite structure (occupying oxygen sites), creating localized structural modifications that provide hydrogen resistance without compromising the overall dielectric functionality or requiring precise control throughout the entire material structure

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The dielectric composition significantly enhances the reliability of electronic circuit boards by maintaining insulation resistance under hydrogen atmospheres, preventing deterioration and ensuring better hydrogen resistance.

Implementation Method 1

the dielectric thin film has a perovskite structure and contains nitrogen in the perovskite structure

Methodology Applied

Scientific EffectNitrogen incorporation in perovskite structure:

Implementation Method 2

maintaining a good dielectric property due to the presence of nitrogen

Methodology Applied

Scientific EffectDielectric property: Dielectric

Data Source

PatentUS11524897B2Dielectric composition, dielectric thin film, dielectric element, and electronic circuit board

Publication Date: 2022.12.13 TDK CORP

AI summary

To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (Sr1-xCax)m(Ti1-yHfy)O3-δNδ, in which 0.15<x≤0.90, 0<y≤0.15, 0.90≤m≤1.15, 0<δ≤0.05 are satisfied.